The density dependence of the diffusion constant in interacting lattice gases: Application to surface diffusion of 0 onW(110)

1981 ◽  
Vol 42 (4) ◽  
pp. 333-347 ◽  
Author(s):  
W. Zwerger
1998 ◽  
Vol 409 (1) ◽  
pp. 117-129 ◽  
Author(s):  
A. Danani ◽  
R. Ferrando ◽  
E. Scalas ◽  
M. Torri

1992 ◽  
Vol 280 ◽  
Author(s):  
A. Zangwill

ABSTRACTRecent experimental results aimed at the measurement of surface diffusion constants by use of scanning tunnelling microscopy and diffraction techniques have reawakened interest in the statistical properties of two-dimensional island nucleation and growth in the submonolayer regime. Classical homogeneous rate equation studies published over twenty years ago established a simple relationship among the number density of stable islands, the deposition flux, and the adatom surface diffusion constant. Recent Monte Carlo simulation studies confirm this prediction and considerably extend the scope of such a scaling description of submonolayer epitaxial growth. In this article, I review the current status of theory and experiment in this area and suggest some areas for future research.


1980 ◽  
Vol 99 (3) ◽  
pp. L429-L433
Author(s):  
Hiromu Asada ◽  
Makihiko Masuda

1980 ◽  
Vol 99 (3) ◽  
pp. L429-L433 ◽  
Author(s):  
Hiromu Asada ◽  
Makihiko Masuda

1996 ◽  
Vol 423 ◽  
Author(s):  
Q. A. Bhatti ◽  
G. J. Moran ◽  
C. C. Matthai

AbstractWe have performed molecular dynamics simulations of adatom diffusion on the SiC(001) surface and found that the barriers for carbon adatoms is less than that for silicon adatoms. The diffusion paths were also found to be temperature dependent and at high temperatures the adatom diffusion constant was found to of the order of 10−5 cm2 s−1.


1997 ◽  
Vol 107 (17) ◽  
pp. 6970-6979 ◽  
Author(s):  
S. Yu. Krylov ◽  
A. V. Prosyanov ◽  
J. J. M. Beenakker

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