Computer Simulation of Surface Diffusion of Silicon and Carbon Adatoms on SiC(001)
Keyword(s):
AbstractWe have performed molecular dynamics simulations of adatom diffusion on the SiC(001) surface and found that the barriers for carbon adatoms is less than that for silicon adatoms. The diffusion paths were also found to be temperature dependent and at high temperatures the adatom diffusion constant was found to of the order of 10−5 cm2 s−1.
2008 ◽
Vol 18
(4)
◽
pp. 343-350
2015 ◽
Vol 429
◽
pp. 35-42
◽
2021 ◽
pp. 105-116
2019 ◽
Vol 151
(4)
◽
pp. 045102
◽
2017 ◽
Vol 139
◽
pp. 16-25
◽