Determination of irradiation temperature from measurement of lattice constant of radiation voids

1976 ◽  
Vol 40 (4) ◽  
pp. 410-411
Author(s):  
Y. V. Konobeev
Keyword(s):  
Lattice Constant ◽  
Irradiation Temperature

Lattice-constant and stress measurement in single crystals: a new method

2005 ◽  
Vol 38 (4) ◽  
pp. 678-684 ◽  
Author(s):  
Balder Ortner
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Lattice Constant ◽  
Stress Measurement ◽  
New Method ◽  
Lattice Plane ◽  
X Ray ◽  
Advantages And Disadvantages

A method for the X-ray determination of lattice-plane distances is given. Similar to Bond's method, it is based on the measurement of rocking curves, with some advantages and disadvantages compared with the former method. The new method is especially designed for single-crystal stress measurement. Its usefulness is demonstrated in two examples of lattice-constant and stress measurement.

Effect of C and Ge Concentration On The Thermal Stability of RTCVD Grown Si1-x-yGexCy Alloys

1997 ◽  
Vol 470 ◽  
Author(s):  
Patricia Warren ◽  
Stephane Retzmanick ◽  
Martin Gotza ◽  
Marc Begems
Keyword(s):  
Lattice Constant ◽  
Strain Relaxation ◽  
Mechanical Strain ◽  
Chemical Vapor ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Cubic Silicon Carbide ◽  
Kinetics Of ◽  
Good Agreement

ABSTRACTSi / Si1-x-yGexCy / Si heterostructures containing up to 17 at.% Ge and 1.9 at.% C were grown on (001) silicon by low pressure Rapid Thermal Chemical Vapor Deposition, using a mixture of silane, germane and methylsilane, diluted in hydrogen. The samples were then annealed in a Rapid Thermal Processing furnace, under an atmospheric pressure of nitrogen, at temperatures ranging from 900 to 1130 °C.The samples were characterized using infrared spectroscopy and x-ray diffraction. SIMS profiling and TEM observation were performed on some of the samples.Substitutional C gradually disappeared, either precipitating out to form cubic silicon carbide (β-SiC), or simply vanishing into interstitial positions. In any case, the in-plane lattice constant remained constant after annealing, indicating that there was no mechanical strain relaxation by formation of misfit dislocations. The perpendicular lattice constant increased due to the decrease in substitutional C concentration, as well as it decreased due to the germanium out-diffusion. This variation of the strain during annealing was modeled, and allowed the determination of the kinetics of the substitutional carbon disappearance. The same behavior was observed for all samples. Indeed, the Cs disappearance rate was always increased for samples with higher initial Ge and C concentrations. The kinetics of this precipitation was found in very good agreement with previous published results.

230 Determination of EB-Irradiation temperature on adhesion of Laminated Sheet of PP and PDMS

2013 ◽  
Vol 2013.21 (0) ◽  
pp. _230-1_-_230-4_
Author(s):  
Chisato KUBO ◽  
Masato UYAMA ◽  
Hideki KAWAZU ◽  
Masae KANDA ◽  
Yoshitake NISHI
Keyword(s):  
Irradiation Temperature

Refinement of the Structure of MnSi by Powder Diffraction

1991 ◽  
Vol 6 (4) ◽  
pp. 194-195 ◽  
Author(s):  
Jens-Erik Jørgensen ◽  
Svend Erik Rasmussen
Keyword(s):  
Lattice Constant ◽  
Powder Diffraction ◽  
Rietveld Method ◽  
Internal Standard ◽  
Position Sensitive Detector ◽  
Intensity Data ◽  
Sensitive Detector ◽  
Crystal Data ◽  
Position Sensitive

AbstractCrystal data and results of structure refinements for MnSi are reported. The material is cubic, P213, with a = 4.5603(2) Å, Vd = 94.84(1) Å3, Z = 4, Dx = 5.815 Mg/m3. Intensity data were obtained from a Stoe transmission type diffractometer equipped with a position sensitive detector. CuKα1 radiation, λ = 1.5405981 Å was employed. Germanium was used as an internal standard for the determination of the lattice constant (aGe= 5.6582 Å). The structure was refined by the Rietveld method by aid of three different programs.

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