Effect of oscillation amplitude on noise in gallium arsenide impatt diode oscillators with uniform doping profile

1983 ◽  
Vol 26 (3) ◽  
pp. 279-286
Author(s):  
S. A. Kornilov ◽  
V. M. Pavlov
Keyword(s):  
Gallium Arsenide ◽  
Oscillation Amplitude ◽  
Doping Profile ◽  
Impatt Diode ◽  
Uniform Doping

scholarly journals Explore the Parametric Variations on Different Doping Profiles of MOSFET for Analog and Digital Applications

2018 ◽  
Author(s):  
Muhammad S Ullah ◽  
Emadelden Fouad ◽  
Xhino M. Domi
Keyword(s):  
Circuit Design ◽  
Integrated Circuit ◽  
Doping Profile ◽  
Integrated Circuit Design ◽  
Design Engineers ◽  
Delta Doping ◽  
Analog Performance ◽  
Parasitic Effects ◽  
Doping Profiles ◽  
Uniform Doping

The VLSI industry is facing parasitic effects that trouble development in the nanoscale domain. However, instead of replacing the traditional MOSFET design, it would be more advantageous to apply different doping profiles and discerning which deal with specific parasitic effects the best. With a review of Gaussian doping, Uniform doping, and Delta doping profiles and analysis of the FET technology characteristics that use these doping profiles, a comparison can be made among them for integrated circuit design engineers. These doping profiles are compared based on how well they perform against non-ideal and ideal environments. Also, both digital and analog performance are measured to ensure the uniqueness of each doping profile that is present. After getting a list of benefits from each doping profile, it is derived to determine which doping profile works best against a host of parasitic effects and what type of application do these doping profiles have

scholarly journals Генерация шума в одночастотном генераторе на лавинно-пролетном диоде миллиметрового диапазона длин волн под воздействием низкочастотного гармонического колебания

2021 ◽  
Vol 47 (22) ◽  
pp. 33
Author(s):  
Е.А. Мясин
Keyword(s):  
Oscillation Amplitude ◽  
Low Frequency ◽  
Harmonic Oscillation ◽  
Noise Spectrum ◽  
Frequency Noise ◽  
Maximum Height ◽  
Low Frequency Oscillation ◽  
Impatt Diode ◽  
Diode Oscillator ◽  
Wave Region

The investigation of effect of the low-frequency harmonic oscillation on the nourishment circuit of the 7mm wave region IMPATT diode oscillator was continued. In first time it was shown, that excitement of noise and the maximum height-frequency noise spectrum extension at a low-frequency oscillation amplitude increasing are connected with a transitory decreasing of the diode current lower the start current of height-frequency generation in the IMPATT diode oscillator.

scholarly journals Analysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation

2021 ◽  
Vol 20 ◽  
pp. 156-165
Author(s):  
Alexander Zemliak ◽  
Eugene Machusky
Keyword(s):  
High Power ◽  
Nonlinear Models ◽  
Doping Profile ◽  
Conductivity Equation ◽  
Impatt Diode ◽  
Power Pulse ◽  
Operating Modes ◽  
Continuity Equations ◽  
Thermal Conductivity Equation ◽  
Impatt Diodes

Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for the analysis, optimization and practical design of pulsedmode millimetric IMPATT diodes. It can also be used to evaluate the thermal behavior of diodes, to correctly select the shape and amplitude of a supply pulse, and to design various types of high-power pulsed millimeter IMPATT diodes with a complex doping profile with improved characteristics.

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