Measured mixer noise temperature and conversion loss of a cryogenic Schottky diode mixer near 800 GHz

1989 ◽  
Vol 10 (11) ◽  
pp. 1371-1376 ◽  
Author(s):  
A. I. Harris ◽  
J. Stutzki ◽  
U. U. Graf ◽  
R. Genzel
Keyword(s):  
Schottky Diode ◽  
Noise Temperature ◽  
Conversion Loss

scholarly journals A Millimeter-Wave 4th-Harmonic Schottky Diode Mixer with Integrated Local Oscillator

2021 ◽  
Vol 11 (16) ◽  
pp. 7238
Author(s):  
José M. Pérez-Escudero ◽  
Carlos Quemada ◽  
Ramón Gonzalo ◽  
Iñigo Ederra
Keyword(s):  
Millimeter Wave ◽  
Schottky Diode ◽  
Experimental Validation ◽  
State Of The Art ◽  
Schottky Diodes ◽  
Noise Temperature ◽  
Local Oscillator ◽  
Conversion Loss ◽  
Fourth Harmonic ◽  
Equivalent Noise Temperature

In this paper the design and experimental validation of a fourth-harmonic mixer based on Schottky diodes working around 300 GHz is presented. The main novelty of this work consists in the integration of an MMIC-based local oscillator, working around 75 GHz, and a mixer in the same metallic block housing. A prototype has been characterized using the Y-Factor method and yields a best measured conversion loss and an equivalent noise temperature of 14 dB and 9600 K, respectively. This performance is comparable to the state-of-the-art for this type of mixer.

scholarly journals Design of 300 GHz Combined Doubler/Subharmonic Mixer Based on Schottky Diodes with Integrated MMIC Based Local Oscillator

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2112
Author(s):  
José M. Pérez-Escudero ◽  
Carlos Quemada ◽  
Ramón Gonzalo ◽  
Iñigo Ederra
Keyword(s):  
State Of The Art ◽  
Schottky Diodes ◽  
Noise Temperature ◽  
Local Oscillator ◽  
The State ◽  
Experimental Characterization ◽  
Conversion Loss ◽  
Equivalent Noise Temperature ◽  
Factor Technique

In this paper the design and experimental characterization of a combined doubler-subharmonic mixer based on Schottky diodes which uses a 75 GHz MMIC based local oscillator is presented. This solution integrates in the same substrate the doubler and the mixer, which share the same metallic packaging with the local oscillator. The prototype has been fabricated and measured. For characterization, the Y-Factor technique has been used and the prototype yields a best conversion loss and equivalent noise temperature of 11 dB and 1976 K, respectively, at 305 GHz. This performance is close to the state of the art, and shows the potential of this approach, which allows a significant reduction in terms of size and volume.

scholarly journals Experimental Study of Noise Temperature and Conversion Loss of SIS Junction Mixers

1986 ◽  
Vol 39 (3) ◽  
pp. 379 ◽  
Author(s):  
JC Macfarlane ◽  
LB Whitbourn ◽  
RA Batchelor
Keyword(s):  
Dynamic Range ◽  
Tunnel Junctions ◽  
Impedance Matching ◽  
Noise Temperature ◽  
Local Oscillator ◽  
Signal Frequency ◽  
Conversion Loss ◽  
Factors Affecting ◽  
Conversion Performance ◽  
Future Work

Experiments on the performance of superconductor-insulator-superconductor (SIS) tunnel junctions as heterodyne mixers at 40 GHz are reported. The techniques developed for the fabrication of multi-junction SIS series arrays differ from, and are considerably simpler than, other methods described in the literature. Results are reported on mixer noise temperature, conversion loss, saturation, local oscillator power levels and mixer dynamic range. Factors affecting the mixer's conversion performance are identified and comparisons are made with other reported results. It is concluded that mixer performance in the present experiments is limited by imperfect impedance matching at the signal frequency, due to relatively large values of parasitic capacitance in the junctions. Future work is aimed at both reducing the junction capacitance and redesigning the mixer mount to give improved r.f. matching.

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

Pseudomorphic GaInP Schottky diode and MSM detector on InP

1990 ◽  
Vol 26 (7) ◽  
pp. 487 ◽  
Author(s):  
S. Loualiche ◽  
A. le Corre ◽  
A. Ginudi ◽  
L. Henry ◽  
C. Vaudry ◽  
...  
Keyword(s):  
Schottky Diode
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