Pseudomorphic GaInP Schottky diode and MSM detector on InP

1990 ◽  
Vol 26 (7) ◽  
pp. 487 ◽  
Author(s):  
S. Loualiche ◽  
A. le Corre ◽  
A. Ginudi ◽  
L. Henry ◽  
C. Vaudry ◽  
...  
Keyword(s):  
Schottky Diode

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

Photo-responsive Schottky Diode Behavior of a Donor-Acceptor Co-crystal with Violet Blue Light Emission

CrystEngComm ◽  
2021 ◽  
Author(s):  
Sanjay Kumar ◽  
Soumen Singha ◽  
Rajkumar Jana ◽  
RITUPARNA MONDAL ◽  
Partha Pratim Bag ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Property ◽  
Schottky Diode ◽  
Electronic Transport ◽  
Supramolecular Structure ◽  
Light Emission ◽  
Electronic Transport Property ◽  
Blue Light Emission ◽  
Donor Acceptor ◽  
Diode Behavior

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

2021 ◽  
Vol 118 (12) ◽  
pp. 122102
Author(s):  
Qinglong Yan ◽  
Hehe Gong ◽  
Jincheng Zhang ◽  
Jiandong Ye ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Current Modulation ◽  
Reverse Leakage Current

On the Nature of Photosensitivity Gain in Ga2O3 Schottky Diode Detectors: Effects of Hole Trapping by Deep Acceptors

2021 ◽  
pp. 160394
Author(s):  
E.B. Yakimov ◽  
A.Y. Polyakov ◽  
I.V. Shchemerov ◽  
N.B. Smirnov ◽  
A.A. Vasilev ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Hole Trapping
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