High-precision strain-gauge test rack on the basis of a PMS-48 potentiometer

1964 ◽  
Vol 7 (1) ◽  
pp. 35-36
Author(s):  
E. V. Shtaiger ◽  
�. N. Krivtsova
Keyword(s):  
High Precision ◽  
Strain Gauge ◽  
Test Rack

scholarly journals A practical approach to evaluate the measurement uncertainty budget for calibration of strain gauge based high-precision carrier frequency amplifiers

ACTA IMEKO ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 210
Author(s):  
Marco M. Schäck
Keyword(s):  
Measurement Uncertainty ◽  
High Precision ◽  
Strain Gauge ◽  
Carrier Frequency ◽  
Uncertainty Budget ◽  
Point Of View ◽  
Precision Measurements ◽  
Frequency Method ◽  
Physical Limit ◽  
Measurement Uncertainty Budget

For high-precision measurements of strain gauge-based transducers, 225 Hz carrier frequency measuring amplifiers are primarily used. The benefits of this carrier frequency method were discussed in previous publications. This publication shows the measurement uncertainty that can be achieved by calibrating an amplifier based on this method. Possibilities for improving the measurement uncertainty and the physical limit from the user's point of view are shown.

scholarly journals High-precision amplifiers for strain gauge based transducers - first time realized in compact size

ACTA IMEKO ◽  
2017 ◽  
Vol 6 (4) ◽  
pp. 31 ◽  
Author(s):  
André W. Schäfer
Keyword(s):  
High Precision ◽  
Strain Gauge ◽  
Strain Gauges ◽  
Compact Size ◽  
First Time

<p class="Abstract"><span lang="EN">In cases where accuracy matters, and in metrology of mechanical quantities such as force, torque or pressure this is definitely the case, are almost exclusively realized by transducers, which are based on strain gauges. To exploit the potential of the widely used high-precision static measurements the demands on </span><span lang="EN-GB">precision amplifiers steadily grow. This paper gives exact details to further progress of the precision amplifiers used and how compact they can be realized nowadays.</span></p>

Precision Transducer for High Pressure Infrared Measurements

1969 ◽  
Vol 23 (2) ◽  
pp. 157-159 ◽  
Author(s):  
J. V. Fox ◽  
H. W. Prengle
Keyword(s):  
High Pressure ◽  
High Precision ◽  
Strain Gauge ◽  
Freezing Point ◽  
Mathematical Function ◽  
Ir Absorption ◽  
Infrared Measurements ◽  
Strain Gauge Transducer ◽  
Pvt Measurements ◽  
Semiconductor Strain

An externally mounted high pressure semiconductor strain gauge transducer of high precision is described which was used in connection with liquid ir absorption and PVT measurements up to 10 000 atm pressure. The transducer is nonlinear, but can be calibrated by a three point procedure, one point of which is the freezing point of mercury at 0°C, and fit to a derived mathematical function. The precision of the device is approximately 0.8 atm, with a repeatability of 5.5 parts in 10 000, at a level of 10 000 atm.

scholarly journals High Precision Strain Gauge Based Sensor for Monitoring Suspension Forces at CERN

2008 ◽  
Vol 8 (2) ◽  
Author(s):  
Friedrich Lackner ◽  
Werner Riegler ◽  
P. Osanna ◽  
M. Durakbasa
Keyword(s):  
High Precision ◽  
Strain Gauge

Design of Mining Portable Static Resistance Strain Gauge Based on ATmega16L

2011 ◽  
Vol 383-390 ◽  
pp. 5917-5922
Author(s):  
Qian Sun ◽  
Feng Yi Guo ◽  
Bin Li ◽  
Fei Yin ◽  
Peng Xu
Keyword(s):  
High Precision ◽  
Strain Gauge ◽  
Coal Mines ◽  
Resistance Strain ◽  
Resistance Strain Gauge ◽  
Testing Method ◽  
Static Resistance ◽  
Bolt Support

Mining portable static resistance strain gauge based on ATmega16L is introduced in this paper. It is used to monitor stress of bolt support in coal mines. The strain gauge is high-precision, simple and Chinese-displaying. It offers a more portable testing method of bolt support in coal mines for the workers.

Automatic measurement of SAED patterns from asbestos minerals

1988 ◽  
Vol 46 ◽  
pp. 846-847
Author(s):  
J. C. Russ ◽  
T. Taguchi ◽  
P. M. Peters ◽  
E. Chatfield ◽  
J. C. Russ ◽  
...  
Keyword(s):  
Diffraction Pattern ◽  
High Precision ◽  
Diffraction Data ◽  
Automatic Measurement ◽  
Automatic Method ◽  
Important Method ◽  
X Ray ◽  
Integrated Intensity ◽  
Asbestiform Minerals ◽  
True Center

Conventional SAD patterns as obtained in the TEM present difficulties for identification of materials such as asbestiform minerals, although diffraction data is considered to be an important method for making this purpose. The preferred orientation of the fibers and the spotty patterns that are obtained do not readily lend themselves to measurement of the integrated intensity values for each d-spacing, and even the d-spacings may be hard to determine precisely because the true center location for the broken rings requires estimation. We have implemented an automatic method for diffraction pattern measurement to overcome these problems. It automatically locates the center of patterns with high precision, measures the radius of each ring of spots in the pattern, and integrates the density of spots in that ring. The resulting spectrum of intensity vs. radius is then used just as a conventional X-ray diffractometer scan would be, to locate peaks and produce a list of d,I values suitable for search/match comparison to known or expected phases.

On effects of non-systematic reflections on weak-beam images of partial dislocations

1991 ◽  
Vol 49 ◽  
pp. 688-689
Author(s):  
K. Z. Botros ◽  
S. S. Sheinin
Keyword(s):  
High Precision ◽  
Stacking Fault ◽  
Important Application ◽  
Stacking Fault Energy ◽  
Sharp Peak ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Deviation Parameter ◽  
Beam Diffraction

The main features of weak beam images of dislocations were first described by Cockayne et al. using calculations of intensity profiles based on the kinematical and two beam dynamical theories. The feature of weak beam images which is of particular interest in this investigation is that intensity profiles exhibit a sharp peak located at a position very close to the position of the dislocation in the crystal. This property of weak beam images of dislocations has an important application in the determination of stacking fault energy of crystals. This can easily be done since the separation of the partial dislocations bounding a stacking fault ribbon can be measured with high precision, assuming of course that the weak beam relationship between the positions of the image and the dislocation is valid. In order to carry out measurements such as these in practice the specimen must be tilted to "good" weak beam diffraction conditions, which implies utilizing high values of the deviation parameter Sg.

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