Structure and properties of epitaxial layers of InxGa1?xAs grown from the gas phase

1992 ◽  
Vol 35 (2) ◽  
pp. 136-139
Author(s):  
M. D. Vilisova ◽  
I. A. Bobrovnikova ◽  
I. V. Teterkina ◽  
N. A. Chernov ◽  
M. P. Yakubenya
Keyword(s):  
Gas Phase ◽  
Epitaxial Layers ◽  
Structure And Properties

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

Characteristics of growth and radiative recombination of epitaxial layers InAsxP1?x(0

1990 ◽  
Vol 52 (1) ◽  
pp. 93-96
Author(s):  
V. A. Bykovskii ◽  
S. A. Manego ◽  
V. I. Osinskii
Keyword(s):  
Gas Phase ◽  
Radiative Recombination ◽  
Epitaxial Layers ◽  
Inp Substrates

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for Power Elec-tronics Technology. Review

2020 ◽  
Vol 25 (6) ◽  
pp. 483-396
Author(s):  
A.V. Afanasev ◽  
◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
S.A. Reshanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Main Method ◽  
Technological Factors ◽  
Current State ◽  
Individual Task ◽  
Technology Review

Currently, chemical gas deposition is the main method for producing high-quality and reproducible epitaxial layers for commercial silicon carbide (SiC) power devices. Based on the experience of ETU «LETI» in the synthesis of monocrystalline SiC, an analysis of the current state of silicon carbide gas phase epitaxy (CVD) technology was carried out. It has been shown that modern CVD reactors allow to implement the growth processes of SiC epitaxial structures of high quality with the following parameters: substrates diameter up to 200 mm; thicknesses of epitaxial layers from 0.1 to 250 μm; layers of n - and p -types conductivity with ranges of doping levels 10-10 cm and 10-10 cm, respectively. At the same time, setting up the technology of the reproducible high-quality growth of epitaxial layers is an individual task for a specific type of reactor. It requires a detailed consideration of the technological factors presented in this paper, which at the end determine the achievable parameters of SiC-epitaxial products

scholarly journals Cooperative hydrogen bonds form a pseudocycle stabilizing an isolated complex of isocyanic acid with urea

2017 ◽  
Vol 19 (36) ◽  
pp. 25080-25085 ◽  
Author(s):  
John C. Mullaney ◽  
Chris Medcraft ◽  
David P. Tew ◽  
Luke Lewis-Borrell ◽  
Bernard T. Golding ◽  
...  
Keyword(s):  
Hydrogen Bonds ◽  
Ab Initio ◽  
Gas Phase ◽  
Microwave Spectroscopy ◽  
Isocyanic Acid ◽  
Structure And Properties ◽  
Phase Complex

The structure and properties of a gas phase complex formed between urea and isocyanic acid are characterised through microwave spectroscopy andab initiocalculations at the CCSD(T)(F12*)/aug-cc-pVTZ level.

ChemInform Abstract: STRUCTURE AND PROPERTIES OF MERCURY SELENIDE EPITAXIAL LAYERS

1976 ◽  
Vol 7 (5) ◽  
pp. no-no
Author(s):  
V. G. SAVITSKII ◽  
L. I. ALEKSEENKO ◽  
A. K. FILATOVA ◽  
I. S. SLABKOVSKII
Keyword(s):  
Epitaxial Layers ◽  
Structure And Properties ◽  
Mercury Selenide ◽  
Abstract Structure
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