Comments on “measurement of the absorption coefficients for the He−Ne laser radiation in a pure hydrogen plasma”

1976 ◽  
Vol 10 (3) ◽  
pp. 251-254
Author(s):  
Kenneth W. Billman ◽  
James R. Stallcop ◽  
Gülay Öke
Keyword(s):  
Laser Radiation ◽  
Hydrogen Plasma ◽  
Pure Hydrogen ◽  
Absorption Coefficients

Optical constants of fully ionized hydrogen plasma for laser radiation

1970 ◽  
Vol 10 (2) ◽  
pp. 111-116 ◽  
Author(s):  
H. Hora ◽  
Hannelore Wilhelm
Keyword(s):  
Laser Radiation ◽  
Optical Constants ◽  
Hydrogen Plasma

A pretreatment process for enhanced diamond nucleation on smooth silicon substrates coated with hard carbon films

1994 ◽  
Vol 9 (8) ◽  
pp. 2148-2153 ◽  
Author(s):  
Z. Feng ◽  
K. Komvopoulos ◽  
I.G. Brown ◽  
D.B. Bogy
Keyword(s):  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Carbon Film ◽  
Laser Raman Spectroscopy ◽  
Spherical Particles ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Pure Hydrogen ◽  
Hard Carbon ◽  
Diamond Nucleation

Diamond nucleation on unscratched silicon substrates coated with thin films of hard carbon was investigated experimentally with a microwave plasma-assisted chemical vapor deposition system. A new pretreatment process was used to enhance the nucleation of diamond. Relatively high diamond nucleation densities of ∼108 cm−2 were achieved by pretreating the carbon-coated silicon substrates with a methane-rich hydrogen plasma at a relatively low temperature for an hour. Scanning electron microscopy and laser Raman spectroscopy studies revealed that diamond nucleation occurred from nanometer-sized spherical particles of amorphous carbon produced during the pretreatment. The nanoparticles possessed a structure different from that of the original hard carbon film, with a broad non-diamond Raman peak centered at ∼1500 cm−1, and a high etching resistance in pure hydrogen plasma. The high diamond nucleation density is attributed to the significant percentage of tetrahedrally bonded (sp3) atomic carbon configurations in the nanoparticles and the presence of sufficient high-surface free-energy sites on the pretreated surfaces.

Observation of Population Inversions in a Freely Expanding Pure Hydrogen Plasma

1980 ◽  
Vol 19 (7) ◽  
pp. L386-L388 ◽  
Author(s):  
Tamio Hara ◽  
Kunihiko Kodera ◽  
Manabu Hamagaki ◽  
Kouzi Matsunaga ◽  
Masaaki Inutake ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Pure Hydrogen

Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma

2007 ◽  
Vol 102 (2) ◽  
pp. 023302 ◽  
Author(s):  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi ◽  
Yoshinori Hamaoka ◽  
Kiyoshi Yasutake
Keyword(s):  
Atmospheric Pressure ◽  
Film Formation ◽  
Hydrogen Plasma ◽  
Silicon Film ◽  
Chemical Transport ◽  
Pure Hydrogen

Filamentation of CO2-Laser Radiation in an Underdense Hydrogen Plasma

1979 ◽  
Vol 43 (20) ◽  
pp. 1502-1505 ◽  
Author(s):  
A. Ng ◽  
D. Salzmann ◽  
A. A. Offenberger
Keyword(s):  
Laser Radiation ◽  
Co2 Laser ◽  
Hydrogen Plasma ◽  
Co2 Laser Radiation

Properties of Binary Si:H Materials Prepared by Hydrogen Plasma Sputtering

1989 ◽  
Vol 164 ◽  
Author(s):  
Shoji Furukawa ◽  
Tatsuro Miyasato
Keyword(s):  
Substrate Temperature ◽  
Room Temperature ◽  
Hydrogen Plasma ◽  
Rf Sputtering ◽  
Hydrogen Atmosphere ◽  
Pure Hydrogen ◽  
Rf Power ◽  
Optical Gap ◽  
Plasma Sputtering ◽  
X Ray Scattering

AbstractBinary Si:H materials are prepared by means of the rf sputtering technique in pure hydrogen atmosphere on low temperature (about 100 K) and room temperature substrates. The physical properties of the obtained materials are very much affected by the rf power and substrate temperature during the deposition. The material prepared at a low substrate temperature with a low rf power has a wide optical gap, and shows a visible photoluminescence at room temperature. On the other hand, the material prepared at room temperature with a high rf power contains many Si microcrystals, whose diameters are relatively large, and its optical gap becomes very small. The latter condition causes the dependence of the crystalline direction of the material film on the substrate crystal even at the room temperature. An rf power-modulated multi-layered structure (superlattice) is also proposed, and an apparent diffraction peak can be observed in the low-angle X-ray scattering measurement.

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