Impurity photoconductivity under monopolar injection conditions

1978 ◽  
Vol 21 (10) ◽  
pp. 1355-1357
Author(s):  
V. V. Piskarev ◽  
V. B. Yarzhembitskii
Keyword(s):  
Impurity Photoconductivity ◽  
Monopolar Injection

Impurity Photoconductivity of γ-Irradiated LiF

1981 ◽  
Vol 103 (2) ◽  
pp. 605-611 ◽  
Author(s):  
R. S. Lee ◽  
J. F. Merklin ◽  
C. D. Marrs ◽  
M. H. Richter
Keyword(s):  
Impurity Photoconductivity

scholarly journals Induced electronic phenomena in crystals of p-GaSe semiconductor promising for optoelectronics

2021 ◽  
Vol 2103 (1) ◽  
pp. 012179
Author(s):  
R F Babayeva
Keyword(s):  
Electric Field ◽  
High Resistance ◽  
Dark Current ◽  
Qualitative Explanation ◽  
Maximum Value ◽  
Spectrum Change ◽  
Erbium Doped ◽  
Impurity Photoconductivity ◽  
Low Illumination ◽  
Field Strengths

Abstract An induced impurity photoconductivity by the electric field, thermally stimulated conductivity and spontaneous pulsations of the dark current were found in the undoped (with a dark resistivity P77≈3•104÷108 Ω-cm at T≈77 K) and erbium doped (NEr=10–5÷10–1 at.%) p-GaSe crystals in the temperature range of T≤240÷250 K at electric field strengths (E) creating a noticeable injection. It was found that the value of the observed impurity photoconductivity (M) monotonically increase at low illumination in undoped crystals with increasing P77 and its spectrum smoothly expands towards longer waves. The value of ∆ii and the width of its spectrum change non-monotonically with increasing NEr in doped crystal and it gets its maximum value at NEr ≈5•10-4 at.%. The intensity of spontaneous pulsations increases with increasing E at the higher electric field strengths. However, the impurity photoconductivity and the peak of thermally stimulated conductivity gradually disappeared. The amplitude and frequency of the observed spontaneous pulsations of the dark current is increased with increasing in the injection ability of the contacts. Moreover, the pulsations of the dark current gradually disappeared with increasing T. It was shown that all these three phenomena are directly caused by the recharge of sticking levels with a depth Er ≈+0.42 eV and a density Nt≈ 1015 cm-3 by injected holes. However, in high-resistance undoped and doped Er ≤10-2 at.% crystals, it is also necessary to consider the presence of random macroscopic defects in the samples to explain their features. A qualitative explanation is proposed based on the obtained results.

Impurity photoconductivity spectra ofZnGa2Se4:Co2+single crystals

1989 ◽  
Vol 39 (12) ◽  
pp. 8747-8749 ◽  
Author(s):  
Yong-Geun Kim ◽  
Hyung-Gon Kim ◽  
Wha-Tek Kim ◽  
Jin Sup Kim ◽  
Dong Sung Ma ◽  
...  
Keyword(s):  
Single Crystals ◽  
Impurity Photoconductivity

Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures

JETP Letters ◽  
2008 ◽  
Vol 88 (3) ◽  
pp. 197-200
Author(s):  
V. Ya. Aleshkin ◽  
A. V. Antonov ◽  
V. I. Gavrilenko ◽  
B. N. Zvonkov ◽  
D. V. Kozlov
Keyword(s):  
Impurity Photoconductivity

PHOTOELECTRIC PROPERTIES OF MnIn2S4 SINGLE CRYSTALS

2021 ◽  
Vol 88 (6) ◽  
pp. 967-969
Author(s):  
N. N. Niftiyev
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Spectral Distribution ◽  
Photoconductivity Spectrum ◽  
Intracenter Transition ◽  
Photoelectric Properties ◽  
Impurity Photoconductivity ◽  
Donor Defect

The spectral distribution of the photoconductivity and the temperature dependence of the photocurrent of MnIn2S4 single crystals are investigated. The intrinsic, impurity photoconductivity and a maximum at an energy of 2.69 eV, which is associated with the intracenter transition of Mn2+ ions (6A1→4A1), are revealed in the photoconductivity spectrum. The region of the wavelengths of 600–1000 nm appears with an excess of manganese in the crystals and is caused by a donor defect. At temperatures of 80—145 K, the increase in the photocurrent is associated with the thermal depletion of the adhesion levels. The activation energy of the adhesion levels is determined.

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

2019 ◽  
Vol 53 (9) ◽  
pp. 1266-1271
Author(s):  
T. A. Uaman Svetikova ◽  
A. V. Ikonnikov ◽  
V. V. Rumyantsev ◽  
D. V. Kozlov ◽  
V. I. Chernichkin ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Impurity Photoconductivity

Features of impurity-photoconductivity relaxation in boron-doped silicon

2012 ◽  
Vol 46 (11) ◽  
pp. 1387-1391 ◽  
Author(s):  
V. V. Rumyantsev ◽  
S. V. Morozov ◽  
K. E. Kudryavtsev ◽  
V. I. Gavrilenko ◽  
D. V. Kozlov
Keyword(s):  
Boron Doped ◽  
Impurity Photoconductivity ◽  
Doped Silicon

Erratum: Impurity photoconductivity spectra of ZnGa2Se4:Co2+single crystals

1990 ◽  
Vol 42 (11) ◽  
pp. 7260-7260
Author(s):  
Yong-Geun Kim ◽  
Hyung-Gon Kim ◽  
Wha-Tek Kim ◽  
Jin Sup Kim ◽  
Dong Sung Ma ◽  
...  
Keyword(s):  
Single Crystals ◽  
Impurity Photoconductivity
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