Erratum: Impurity photoconductivity spectra of ZnGa2Se4:Co2+single crystals

1990 ◽  
Vol 42 (11) ◽  
pp. 7260-7260
Author(s):  
Yong-Geun Kim ◽  
Hyung-Gon Kim ◽  
Wha-Tek Kim ◽  
Jin Sup Kim ◽  
Dong Sung Ma ◽  
...  
Keyword(s):  
Single Crystals ◽  
Impurity Photoconductivity

Impurity photoconductivity spectra ofZnGa2Se4:Co2+single crystals

1989 ◽  
Vol 39 (12) ◽  
pp. 8747-8749 ◽  
Author(s):  
Yong-Geun Kim ◽  
Hyung-Gon Kim ◽  
Wha-Tek Kim ◽  
Jin Sup Kim ◽  
Dong Sung Ma ◽  
...  
Keyword(s):  
Single Crystals ◽  
Impurity Photoconductivity

PHOTOELECTRIC PROPERTIES OF MnIn2S4 SINGLE CRYSTALS

2021 ◽  
Vol 88 (6) ◽  
pp. 967-969
Author(s):  
N. N. Niftiyev
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Spectral Distribution ◽  
Photoconductivity Spectrum ◽  
Intracenter Transition ◽  
Photoelectric Properties ◽  
Impurity Photoconductivity ◽  
Donor Defect

The spectral distribution of the photoconductivity and the temperature dependence of the photocurrent of MnIn2S4 single crystals are investigated. The intrinsic, impurity photoconductivity and a maximum at an energy of 2.69 eV, which is associated with the intracenter transition of Mn2+ ions (6A1→4A1), are revealed in the photoconductivity spectrum. The region of the wavelengths of 600–1000 nm appears with an excess of manganese in the crystals and is caused by a donor defect. At temperatures of 80—145 K, the increase in the photocurrent is associated with the thermal depletion of the adhesion levels. The activation energy of the adhesion levels is determined.

Impurity photoconductivity of CdSnP2 single crystals

1970 ◽  
Vol 3 (1) ◽  
pp. K51-K53 ◽  
Author(s):  
I. P. Akimchenko ◽  
N. A. Goryunova ◽  
E. I. Leonov ◽  
V. M. Orlov
Keyword(s):  
Single Crystals ◽  
Impurity Photoconductivity

Impurity Photoconductivity in TIInSe2 Single Crystals

1986 ◽  
Vol 96 (1) ◽  
pp. K73-K78 ◽  
Author(s):  
G. D. Guseinov ◽  
V. A. Aliev ◽  
E. F. Bagirzade
Keyword(s):  
Single Crystals ◽  
Impurity Photoconductivity

Effect of gadolinium impurities on injection-induced impurity photoconductivity in InSe single crystals

1985 ◽  
Vol 92 (1) ◽  
pp. K77-K80 ◽  
Author(s):  
Z. A. Iskenderzade ◽  
O. M. Sadykhov ◽  
A. Sh. Abdinov
Keyword(s):  
Single Crystals ◽  
Impurity Photoconductivity

The Microstructure of Shock-Synthesized Diamond

1967 ◽  
Vol 25 ◽  
pp. 324-325
Author(s):  
Lucien F. Trueb
Keyword(s):  
Single Crystals ◽  
Preferred Orientation ◽  
High Magnification ◽  
Texture Pattern ◽  
Shock Process ◽  
New Type ◽  
Diffraction Diagram

A new type of synthetic industrial diamond formed by an explosive shock process has been recently developed by the Du Pont Company. This material consists of a mixture of two basically different forms, as shown in Figure 1: relatively flat and compact aggregates of acicular crystallites, and single crystals in the form of irregular polyhedra with straight edges.Figure 2 is a high magnification micrograph typical for the fibrous aggregates; it shows that they are composed of bundles of crystallites 0.05-0.3 μ long and 0.02 μ. wide. The selected area diffraction diagram (insert in Figure 2) consists of a weak polycrystalline ring pattern and a strong texture pattern with arc reflections. The latter results from crystals having preferred orientation, which shows that in a given particle most fibrils have a similar orientation.

A New Defect in Polyethylene Single Crystals

1973 ◽  
Vol 31 ◽  
pp. 70-71
Author(s):  
E. L. Thomas ◽  
S. L. Sass
Keyword(s):  
Single Crystals ◽  
Screw Dislocation ◽  
Small Distance ◽  
Dipole Model ◽  
Dislocation Dipole ◽  
Chain Folding ◽  
Black And White ◽  
Polymer Crystal ◽  
Different Types

In polyethylene single crystals pairs of black and white lines spaced 700-3,000Å apart, parallel to the [100] and [010] directions, have been identified as microsector boundaries. A microsector is formed when the plane of chain folding changes over a small distance within a polymer crystal. In order for the different types of folds to accommodate at the boundary between the 2 fold domains, a staggering along the chain direction and a rotation of the chains in the plane of the boundary occurs. The black-white contrast from a microsector boundary can be explained in terms of these chain rotations. We demonstrate that microsectors can terminate within the crystal and interpret the observed terminal strain contrast in terms of a screw dislocation dipole model.

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

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