Current-voltage characteristics of symmetric structures based on glasses with high bismuth oxide content

1977 ◽  
Vol 20 (5) ◽  
pp. 621-623
Author(s):  
A. B. Glot ◽  
V. B. Odnorozhenko ◽  
B. K. Chernyi ◽  
A. Ya. Yakunin
2013 ◽  
Vol 54 (8) ◽  
pp. 1811-1816 ◽  
Author(s):  
Mert Yıldırım ◽  
Muharrem Gökçen ◽  
Tuncay Tunç ◽  
İbrahim Uslu ◽  
Şemsettin Altındal

2005 ◽  
Vol 865 ◽  
Author(s):  
Diana Shvydka ◽  
V. Parikh ◽  
V.G. Karpov ◽  
A.D. Compaan

AbstractWe study the electric current through metal-semiconductor junctions of a type used in thin-film PV for back contacts. To concentrate on one type of junction we used the symmetric structures of rf-sputtered CdTe layer sandwiched between two Cr contacts. Along with the conventional measurements, the current-sensing contact mode AFM was employed to measure the current-voltage characteristics and current variations with time under fixed voltage. We found that (i) the electric current flow is laterally strongly nonuniform; (ii) it chaotically varies over time; (iii) this behavior did not correlate with surface topography. We interpret our observations in terms of defect assisted tunneling through time-dependent defect pathways.


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