Analog method of measuring the derivatives of current-voltage characteristics of semiconducting devices

1990 ◽  
Vol 33 (4) ◽  
pp. 387-389
Author(s):  
I. E. Voronkov ◽  
R. S. Petukhov ◽  
L. L. Svetlichnaya
Keyword(s):  
Analog Method ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Derivatives Of

Electrical Behavior I-V Theoretical-Experimental OLEDS

2014 ◽  
Vol 1613 ◽  
pp. 121-126
Author(s):  
José M. Burgoa ◽  
Cecilia González-Medina ◽  
Ramón Gómez-Aguilar ◽  
Jaime Ortiz-López
Keyword(s):  
Light Emitting Diode ◽  
Hole Injection ◽  
Software Environment ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Current Voltage ◽  
Polymer Semiconductor ◽  
Current Voltage Characteristics ◽  
Derivatives Of ◽  
Magnitude Difference

ABSTRACTWe develop a program (within MATLAB software environment) to numerically simulate current-voltage characteristics of a bilayer organic light-emitting diode (OLED). The program is based on the Poole-Frenkel and Schottky continuous quantum models which take into account the geometry of thin films and their emission parameters in the calculation of charge carrier and current density in organic materials. Simulations are performed for OLEDs with A/EML/C and A/HIL/EML/C architectures where A=anode, HIL=hole injection layer, EML=emissive layer and C=cathode. For EML we assume MEH-PPV and MDMO-PPV derivatives of poly-para-phenylene-vinylene (PPV) polymer semiconductor, and for HIL we use PEDOT:PSS. The results of simulation are compared with experimental results obtained from actual OLED devices constructed in our laboratory. For comparison we also use the commercial software SimOLED to simulate the devices under similar architectures. We find in general a fair agreement between the simulated and measured behavior except for a few orders of magnitude difference in the current.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Sign in / Sign up

Export Citation Format

Share Document