Measurement of the nonlinearity of light diode current-voltage characteristics

1985 ◽  
Vol 28 (12) ◽  
pp. 1054-1055
Author(s):  
V. A. Dorin ◽  
Yu. Z. Smolin
Keyword(s):  
Light Diode ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Diode Current

Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 1010-1013 ◽  
Author(s):  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Vladimir A. Ilyin ◽  
Alexey F. Kardo-Sysoev ◽  
Maria A. Kuznetsova ◽  
...  
Keyword(s):  
Field Emission ◽  
Wide Bandgap ◽  
Voltage Characteristic ◽  
Vacuum Field ◽  
Current Voltage ◽  
Capacitor Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics ◽  
Manufacturing Methods ◽  
Diode Current

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.

scholarly journals Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Krzesimir Nowakowski-Szkudlarek ◽  
Grzegorz Muziol ◽  
Mikolaj Żak ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Contact Layer ◽  
Light Emitting ◽  
Mg Doping ◽  
Current Voltage ◽  
Type Contact ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

2006 ◽  
Vol 527-529 ◽  
pp. 815-818 ◽  
Author(s):  
Roberta Nipoti ◽  
Fabio Bergamini ◽  
Francesco Moscatelli ◽  
Antonella Poggi ◽  
Mariaconcetta Canino ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Annealing Process ◽  
Current Analysis ◽  
Selective Area ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Implantation Process ◽  
Voltage Breakdown ◽  
Post Implantation ◽  
Diode Current

An n-type 8° off-axis <0001> 4H-SiC epitaxial wafer was processed. The n-type epilayer had doping and thickness of, respectively, ~3 × 1015 cm-3 and ~5 μm. p+/n diodes with not terminated junctions were constructed by a selective area implantation process of 9.2 × 1014 cm-2 Al+ ions at 400°C. The diodes had areas in the range 2×10-4 -1×10-3 cm2. The Al depth profile was 6×1019 cm-3 high and 164 nm thick. The post implantation annealing process was done in a high purity Ar ambient at 1600°C for 30 min. The diode current-voltage characteristics were measured in the temperature range 25-290°C. Statistics of 50-100 measurements per device type were done. The fraction of diodes that could be modeled as abrupt junctions within the frame of the Shockley theory decreased with increasing area value, but was always > 75%. The ideality factor was > 2 only at temperatures > 200°C and bias values < 1 V. The leakage current was extremely weak and remained of the order of 10-9 Acm-2 at 70°C and 500 V reverse bias. 4% of the diodes reached the theoretical voltage breakdown that was 1030 V. The surface roughness of un-implanted and implanted regions after diode processing was, respectively, 2 nm and 12 nm.

Utilization of silicon detectors with “ideal-diode” current-voltage characteristics

2013 ◽  
Vol 47 (2) ◽  
pp. 209-212 ◽  
Author(s):  
V. L. Sukhanov ◽  
P. N. Aruev ◽  
M. V. Drozdova ◽  
N. V. Zabrodskaya ◽  
V. V. Zabrodskiy ◽  
...  
Keyword(s):  
Silicon Detectors ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ideal Diode ◽  
Diode Current

scholarly journals Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89

2021 ◽  
Vol 2086 (1) ◽  
pp. 012065
Author(s):  
S V Sedykh ◽  
S B Rybalka ◽  
A A Demidov ◽  
E A Kulchenkov
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Reverse Current ◽  
Forward Direction ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ideal Diode ◽  
Diode Current ◽  
The Ideal

Abstract The forward and reverse current–voltage characteristics of Ti/Al/4H-SiC Schottky diode type DDSH411A91 in modern small-sized (SOT-89) type metal-polymeric package have been obtained. In forward direction (current up to 2 A) on the basis of analysis it is shown that Schottky diode corresponds to the "ideal" diode with ideality factor n=1.12 and effective Schottky barrier height φB =1.2 eV. It is shown that reverse current-voltage characteristics (breakdown voltage 1200 V) can be well approximated by mechanism of field dependence of barrier height lowering by the presence of the intermediate layer in the form of oxide on the 4H-SiC surface.

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