Some Considerable Effects on Pt∕n-InP Schottky Diode Current-Voltage Characteristics due to Electron Irradiation

2011 ◽  
Author(s):  
H. Korkut ◽  
K. Ejderha ◽  
A. Akbay ◽  
Y. Öztürka ◽  
T. Korkut ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Electron Irradiation ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Diode Current

scholarly journals Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89

2021 ◽  
Vol 2086 (1) ◽  
pp. 012065
Author(s):  
S V Sedykh ◽  
S B Rybalka ◽  
A A Demidov ◽  
E A Kulchenkov
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Reverse Current ◽  
Forward Direction ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ideal Diode ◽  
Diode Current ◽  
The Ideal

Abstract The forward and reverse current–voltage characteristics of Ti/Al/4H-SiC Schottky diode type DDSH411A91 in modern small-sized (SOT-89) type metal-polymeric package have been obtained. In forward direction (current up to 2 A) on the basis of analysis it is shown that Schottky diode corresponds to the "ideal" diode with ideality factor n=1.12 and effective Schottky barrier height φB =1.2 eV. It is shown that reverse current-voltage characteristics (breakdown voltage 1200 V) can be well approximated by mechanism of field dependence of barrier height lowering by the presence of the intermediate layer in the form of oxide on the 4H-SiC surface.

scholarly journals Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

2017 ◽  
Vol 917 ◽  
pp. 082010 ◽  
Author(s):  
P V Panchenko ◽  
S B Rybalka ◽  
A A Malakhanov ◽  
A A Demidov ◽  
E Yu Krayushkina ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Diode ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Diode Current

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Electrical conductivity and current-voltage characteristics of alumina with or without neutron and electron irradiation

1998 ◽  
Vol 258-263 ◽  
pp. 1848-1855 ◽  
Author(s):  
K Shiiyama ◽  
M.M.R Howlader ◽  
S.J Zinkle ◽  
T Shikama ◽  
M Kutsuwada ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electron Irradiation ◽  
Current Voltage ◽  
Current Voltage Characteristics

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

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