Motion of a nonlinear viscoelastic liquid in cylindrical channels of triangular cross section

1975 ◽  
Vol 10 (2) ◽  
pp. 279-283
Author(s):  
V. G. Litvinov ◽  
V. M. Goncharenko
Keyword(s):  
Cross Section ◽  
Viscoelastic Liquid ◽  
Triangular Cross Section ◽  
Nonlinear Viscoelastic

Analysis of Q-factors of structural imperfections in triangular cross-section nanobeam photonic crystal cavities

2015 ◽  
Vol 32 (9) ◽  
pp. 1792 ◽  
Author(s):  
Yuki Yamaguchi ◽  
Seung-Woo Jeon ◽  
Bong-Shik Song ◽  
Yoshinori Tanaka ◽  
Takashi Asano ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Cross Section ◽  
Photonic Crystal Cavities ◽  
Triangular Cross Section ◽  
Q Factors ◽  
Structural Imperfections

Electroosmotic flow of Maxwell fluid in a microchannel of isosceles right triangular cross section

2021 ◽  
Vol 33 (12) ◽  
pp. 123113
Author(s):  
Xu Yang ◽  
Shaowei Wang ◽  
Moli Zhao ◽  
Yue Xiao
Keyword(s):  
Cross Section ◽  
Electroosmotic Flow ◽  
Maxwell Fluid ◽  
Triangular Cross Section

scholarly journals High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

2018 ◽  
Vol 8 (9) ◽  
pp. 1553 ◽  
Author(s):  
Ming Li ◽  
Gong Chen ◽  
Ru Huang
Keyword(s):  
Cross Section ◽  
High Performance ◽  
Silicon Nanowire ◽  
Wet Etching ◽  
Excellent Performance ◽  
Cross Sectional ◽  
Triangular Cross Section ◽  
Tcad Simulation ◽  
Equivalent Distance ◽  
20 Nm

In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the triangular cross-sectional SNWT was superior to the circular or quadrate one in terms of the subthreshold swing, on/off ratio, and SCE immunity, which resulted from the smallest equivalent distance from the nanowire center to the surface in triangular SNWTs. Following this, we fabricated triangular cross-sectional GAA SNWTs with a nanowire width down to 20 nm by TMAH wet etching. This process featured its self-stopped etching behavior on a silicon (1 1 1) crystal plane, which made the triangular cross section smooth and controllable. The fabricated triangular SNWT showed an excellent performance with a large Ion/Ioff ratio (~107), low SS (85 mV/dec), and preferable DIBL (63 mV/V). Finally, the surface roughness mobility of the fabricated device at a low temperature was also extracted to confirm the benefit of a stable cross section.

Sign in / Sign up

Export Citation Format

Share Document