Study of the surface of finely divided titanium nitride by x-ray photoelectron spectroscopy

1979 ◽  
Vol 18 (10) ◽  
pp. 681-684 ◽  
Author(s):  
Yu. M. Shul'ga ◽  
V. N. Troitskii
Keyword(s):  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
X Ray

The Platinum∕Titanium-Nitride Interface: X-Ray Photoelectron Spectroscopy Studies

2012 ◽  
Vol 15 (6) ◽  
pp. B79
Author(s):  
Nikola Matić ◽  
Gary S. Chottiner ◽  
Frank Ernst ◽  
Daniel Scherson
Keyword(s):  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Spectroscopy Studies

Atomic Layer Deposition of TiN below 600 K Using N2H4

2018 ◽  
Vol 282 ◽  
pp. 232-237
Author(s):  
Adam Hinckley ◽  
Anthony Muscat
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Detection Limits ◽  
Atomic Layer ◽  
Volatile Species ◽  
X Ray ◽  
Layer Deposition

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

Xps Study of the Nitridation Process of A Polytitanocarbosilane into Si-Ti-N-O Ceramics

1992 ◽  
Vol 271 ◽  
Author(s):  
G. Granozzi ◽  
A. Glisenti ◽  
R. Bertoncello ◽  
G. D. Soraru
Keyword(s):  
Titanium Nitride ◽  
Firing Temperature ◽  
Photoelectron Spectroscopy ◽  
Transformation Process ◽  
Nitrogen Enrichment ◽  
X Ray ◽  
Nitridation Process ◽  
Nitride Ceramics ◽  
Xps Study

ABSTRACTThe nitridation process of a polytitanocarbosilane, leading to the formation of a Si-Ti-N-O ceramics, has been investigated mainly by means of X-ray photoelectron spectroscopy (XPS). Ti2p spectra collected on samples fired at various stages of the transformation process clearly shown that Ti-N bonds of TiOxNy mixed units start to form at 500 °C. By increasing the firing temperature, the Ti2p peak shifts toward values typical of titanium nitride ceramics, so indicating the progressive nitrogen enrichment of the mixed units up to the formation of a TiN phase.

The Platinum/Titanium Nitride Interface: X-ray Photoelectron Spectroscopy Studies

2019 ◽  
Vol 41 (1) ◽  
pp. 865-874
Author(s):  
Nikola Matic ◽  
Gary Chottiner ◽  
Frank Ernst ◽  
Daniel Scherson
Keyword(s):  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Spectroscopy Studies

scholarly journals X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 239
Author(s):  
Monzer Maarouf ◽  
Muhammad Baseer Haider ◽  
Qasem Ahmed Drmosh ◽  
Mogtaba B. Mekki
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Depth Profiling ◽  
Fused Silica ◽  
X Ray ◽  
Chemisorbed Oxygen ◽  
Different Temperatures ◽  
Hall Effect Measurements

Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.

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