Kinetics of antimony trioxide reduction by hydrogen. Effect of atomic hydrogen

1978 ◽  
Vol 17 (6) ◽  
pp. 419-421 ◽  
Author(s):  
V. B. Chernogorenko ◽  
K. A. Lynchak ◽  
Z. A. Klimak ◽  
R. A. Morozova
Keyword(s):  
Atomic Hydrogen ◽  
Antimony Trioxide ◽  
Hydrogen Effect ◽  
Kinetics Of

The effect of atomic hydrogen on the kinetics of iron passivation in neutral solutions

2014 ◽  
Vol 50 (3) ◽  
pp. 345-351 ◽  
Author(s):  
A. I. Marshakov ◽  
A. A. Rybkina ◽  
M. A. Maleeva ◽  
A. A. Rybkin
Keyword(s):  
Atomic Hydrogen ◽  
Kinetics Of

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
A.J. Ptak ◽  
T.H. Myers ◽  
Lijun Wang ◽  
N.C. Giles ◽  
M. Moldovan ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Plasma ◽  
Dopant Incorporation ◽  
Optical Activation ◽  
P Type ◽  
Kinetics Of ◽  
Secondary Ion

ABSTRACTStep-doped structures of both magnesium and beryllium were grown in GaN and analyzed using secondary ion mass spectrometry. Dopant incorporation was studied as a function of substrate temperature and dopant flux for Ga-polarity and N-polarity GaN. Incorporation is different for each polarity, with Mg incorporating by up to a factor of 20 times more (30 times more with atomic hydrogen) on the Ga-face, while Be incorporates more readily on the N-face. The effect of atomic hydrogen on the incorporation kinetics of both Mg and Be is also discussed. Mg and Be both undergo surface segregation during growth. Photoluminescence measurements suggest that Be is a p-type dopant with an optical activation energy of approximately 100 meV.

Bombardment by Reflection - A Novel Method to Prepare High Quality Hydrogenated Amorphous Germanium by Anodic PCVD

1997 ◽  
Vol 467 ◽  
Author(s):  
Annette Diez ◽  
Twlo P. Drüsedau
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Mobility ◽  
Hydrogen Pressure ◽  
Amorphous Germanium ◽  
Hydrogen Dilution ◽  
Novel Method ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium ◽  
Kinetics Of

ABSTRACTDeposition of amorphous germanium by anodic PCVD was performed changing the germane/hydrogen dilution ratio from 1/6 to 1/100. Films deposited under high dilution of germane are of a high mechanical density (92.5 % of bulk) and good optoelectronic properties (electrical conductivity at room temperature σ=10−5 (Ω cm)−1, majority carrier mobility-lifetime product at λ=1200 nm ημ=x 10−7 cm2/V). The quality of the films is increased by deposition at increasing pumping speed for hydrogen (lower hydrogen pressure) keeping the other parameters constant. It is suggested that fast atomic hydrogen originating from a backscattering process at the powered electrode bombard the growing film and contribute to the improved quality of the a-Ge:H. Also, the growth kinetics of the films is changed from linear to parabolic dependence on germane flow interchanging deposition from high to low hydrogen pressure. This effect is rationalized in terms of a contribution of energetic atomic hydrogen to the dissociation of germane.

Sign in / Sign up

Export Citation Format

Share Document