Gap symmetry and intrinsic intraplane pinning of untwinned YBa2Cu3O7 single crystals

1996 ◽  
Vol 105 (5-6) ◽  
pp. 1165-1170 ◽  
Author(s):  
Takekazu Ishida ◽  
Kiichi Okuda ◽  
Hidehito Asaoka ◽  
Yukio Kazumata ◽  
Kenji Noda ◽  
...  
Keyword(s):  
Single Crystals ◽  
Gap Symmetry

Two S-wave gap symmetry for single crystals of the superconductor BaFe1.8Co0.2As2

2010 ◽  
Vol 470 ◽  
pp. S506-S507 ◽  
Author(s):  
Ki-Young Choi ◽  
Soo Hyun Kim ◽  
Changho Choi ◽  
Myung-Hwa Jung ◽  
X.F. Wang ◽  
...  
Keyword(s):  
Single Crystals ◽  
S Wave ◽  
Gap Symmetry

The Microstructure of Shock-Synthesized Diamond

1967 ◽  
Vol 25 ◽  
pp. 324-325
Author(s):  
Lucien F. Trueb
Keyword(s):  
Single Crystals ◽  
Preferred Orientation ◽  
High Magnification ◽  
Texture Pattern ◽  
Shock Process ◽  
New Type ◽  
Diffraction Diagram

A new type of synthetic industrial diamond formed by an explosive shock process has been recently developed by the Du Pont Company. This material consists of a mixture of two basically different forms, as shown in Figure 1: relatively flat and compact aggregates of acicular crystallites, and single crystals in the form of irregular polyhedra with straight edges.Figure 2 is a high magnification micrograph typical for the fibrous aggregates; it shows that they are composed of bundles of crystallites 0.05-0.3 μ long and 0.02 μ. wide. The selected area diffraction diagram (insert in Figure 2) consists of a weak polycrystalline ring pattern and a strong texture pattern with arc reflections. The latter results from crystals having preferred orientation, which shows that in a given particle most fibrils have a similar orientation.

A New Defect in Polyethylene Single Crystals

1973 ◽  
Vol 31 ◽  
pp. 70-71
Author(s):  
E. L. Thomas ◽  
S. L. Sass
Keyword(s):  
Single Crystals ◽  
Screw Dislocation ◽  
Small Distance ◽  
Dipole Model ◽  
Dislocation Dipole ◽  
Chain Folding ◽  
Black And White ◽  
Polymer Crystal ◽  
Different Types

In polyethylene single crystals pairs of black and white lines spaced 700-3,000Å apart, parallel to the [100] and [010] directions, have been identified as microsector boundaries. A microsector is formed when the plane of chain folding changes over a small distance within a polymer crystal. In order for the different types of folds to accommodate at the boundary between the 2 fold domains, a staggering along the chain direction and a rotation of the chains in the plane of the boundary occurs. The black-white contrast from a microsector boundary can be explained in terms of these chain rotations. We demonstrate that microsectors can terminate within the crystal and interpret the observed terminal strain contrast in terms of a screw dislocation dipole model.

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

1978 ◽  
Vol 36 (1) ◽  
pp. 594-595
Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd
Keyword(s):  
Flow Stress ◽  
Single Crystals ◽  
Room Temperature ◽  
Thin Foil ◽  
Age Hardening ◽  
Dispersion Strengthening ◽  
Accurate Picture ◽  
The Matrix ◽  
Very High ◽  
Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

Bright field and weak-beam images of dislocations gliding on (001) planes in F.C.C. metals

1978 ◽  
Vol 36 (1) ◽  
pp. 352-353
Author(s):  
H. P. Karnthaler ◽  
A. Korner
Keyword(s):  
Single Crystals ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Stage Ii ◽  
Bright Field ◽  
Weak Beam ◽  
Standard Orientation

In f.c.c. metals slip is observed to occur generally on {111} planes. Glide dislocations on intersecting {111} planes can react with each other and form Lomer-Cottrell locks which lie along a <110> direction and are sessile since they are split on two {111} planes. Cottrell already pointed out that these dislocations could glide on {001} planes if they were not split. The first study of this phenomenon has been published recently. It is the purpose of this paper to report some interesting new details of the dislocations gliding on {001} planes in pure Ni, Cu, and Ag deformed at room temperature.Single crystals are grown with standard orientation and strained into stage II. The crystals are sliced parallel to the (001) planes. The dislocation structure is studied by TEM and the Burgers vectors ḇ and glide planes of the dislocations are determined unambiguously.In Fig.l primary P and secondary S dislocations react and form composite dislocations K.

Precipitation of NiHfsi phase in NiAl single crystals containing Hf

1995 ◽  
Vol 53 ◽  
pp. 532-533
Author(s):  
A. Garg ◽  
R. D. Noebe ◽  
R. Darolia
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
High Temperature Strength ◽  
Bridgman Technique ◽  
Shell Mold ◽  
Third Phase ◽  
Unknown Phase ◽  
Transmission Electron ◽  
Two Phases ◽  
Nial Matrix

Small additions of Hf to NiAl produce a significant increase in the high-temperature strength of single crystals. Hf has a very limited solubility in NiAl and in the presence of Si, results in a high density of G-phase (Ni16Hf6Si7) cuboidal precipitates and some G-platelets in a NiAl matrix. These precipitates have a F.C.C structure and nucleate on {100}NiAl planes with almost perfect coherency and a cube-on-cube orientation-relationship (O.R.). However, G-phase is metastable and after prolonged aging at high temperature dissolves at the expense of a more stable Heusler (β'-Ni2AlHf) phase. In addition to these two phases, a third phase was shown to be present in a NiAl-0.3at. % Hf alloy, but was not previously identified (Fig. 4 of ref. 2 ). In this work, we report the morphology, crystal-structure, O.R., and stability of this unknown phase, which were determined using conventional and analytical transmission electron microscopy (TEM).Single crystals of NiAl containing 0.5at. % Hf were grown by a Bridgman technique. Chemical analysis indicated that these crystals also contained Si, which was not an intentional alloying addition but was picked up from the shell mold during directional solidification.

Zone-axis ALCHEMI for the rapid assessment of site occupancies in garnets

1986 ◽  
Vol 44 ◽  
pp. 706-707
Author(s):  
M.T. Otten ◽  
P.R. Buseck
Keyword(s):  
Single Crystals ◽  
Rapid Assessment ◽  
Site Occupancy ◽  
Zone Axis ◽  
Synthetic Compounds ◽  
X Ray ◽  
Large Group ◽  
Crystallographic Planes

ALCHEMI (Atom Location by CHannelling-Enhanced Microanalysis) is a TEM technique for determining site occupancies in single crystals. The method uses the channelling of incident electrons along specific crystallographic planes. This channelling results in enhanced x-ray emission from the atoms on those planes, thereby providing the required site-occupancy information. ALCHEMI has been applied with success to spinel, olivine and feldspar. For the garnets, which form a large group of important minerals and synthetic compounds, the channelling effect is weaker, and significant results are more difficult to obtain. It was found, however, that the channelling effect is pronounced for low-index zone-axis orientations, yielding a method for assessing site occupancies that is rapid and easy to perform.

Investigation of shock-wave deformation history from recovered structure

1986 ◽  
Vol 44 ◽  
pp. 434-435
Author(s):  
M.A. Mogilevsky ◽  
L.S. Bushnev
Keyword(s):  
Shock Wave ◽  
Plastic Deformation ◽  
Dislocation Density ◽  
Shock Waves ◽  
Shock Front ◽  
Single Crystals ◽  
Residual Deformation ◽  
Deformation Structure ◽  
Deformation History ◽  
Deformation Velocity

Single crystals of Al were loaded by 15 to 40 GPa shock waves at 77 K with a pulse duration of 1.0 to 0.5 μs and a residual deformation of ∼1%. The analysis of deformation structure peculiarities allows the deformation history to be re-established.After a 20 to 40 GPa loading the dislocation density in the recovered samples was about 1010 cm-2. By measuring the thickness of the 40 GPa shock front in Al, a plastic deformation velocity of 1.07 x 108 s-1 is obtained, from where the moving dislocation density at the front is 7 x 1010 cm-2. A very small part of dislocations moves during the whole time of compression, i.e. a total dislocation density at the front must be in excess of this value by one or two orders. Consequently, due to extremely high stresses, at the front there exists a very unstable structure which is rearranged later with a noticeable decrease in dislocation density.

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

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