Angular and surface roughness dependence of the electrical conductivity of thin metal films

1984 ◽  
Vol 3 (5) ◽  
pp. 464-468 ◽  
Author(s):  
C. R. Tellier
Keyword(s):  
Electrical Conductivity ◽  
Surface Roughness ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Influence of charge effects on the electrical conductivity of thin metal films

1966 ◽  
Vol 2 (9) ◽  
pp. 327 ◽  
Author(s):  
R.W. Alsford ◽  
R.E. Hayes ◽  
D.I. Kennedy
Keyword(s):  
Electrical Conductivity ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Charge Effects

Study of Surface and Electrical Conductivity of Thin Metal Films of the Ni–Al System

2021 ◽  
Vol 16 (2) ◽  
pp. 261-266
Author(s):  
S. F. Dmitriev ◽  
A. V. Ishkov ◽  
A. M. Sagalakov ◽  
A.O. Katasonov ◽  
V. N. Malikov
Keyword(s):  
Electrical Conductivity ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Microstructure Control for Thin Film Metallization

1996 ◽  
Vol 441 ◽  
Author(s):  
G. S. Was ◽  
D. J. Srolovitz ◽  
Z. Ma ◽  
D. Liang
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Surface Roughness ◽  
Ion Beam ◽  
Metal Films ◽  
Fiber Texture ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Ion Beam Assisted Deposition ◽  
Hillock Formation

AbstractA strategy was developed for controlling hillock formation in thin metal films by controlling the fiber texture to be of a relatively “weak” orientation. Two-dimensional molecular dynamics (MD) simulations were performed to determine the parameter dependencies of texturing under ion beam assisted deposition. Simulations showed that even for film orientations that have a lower number of nearest neighbor surface bonds, the reduction in sputtering rate by ion channeling will favor the growth of the grains aligned with their channeling direction in the direction of the ion beam. Higher energies should result in greater sputtering and a higher surface roughness. Confirmatory experiments were performed by growing Al films using ion beam assisted deposition in which the Ne ion beam was normal to the substrate surface. For all energies above 0 eV/atom, the fiber texture contained a (220) component and, at high normalized energies, the fiber texture was heavily (220) dominated. Subsequent annealing at 450°C for 30 min. resulted in hillock formation in the PVD (physical vapor deposition) condition, a reduction in the hillock density by two orders of magnitude in the 120 eV/atom condition and complete elimination of hillocking above 800 eV/atom. Although the surface roughness increased with ion beam energy as modeled by MD, the surface became smoother during annealing. These results show that the fiber texture can be controlled in a thin metal film in such a way as to eliminate hillock formation, that molecular dynamics simulation is a valuable predictive tool for guiding experiments in the development of thin film microstructures and that ion beam assisted deposition is an effective, practical tool for controlling microstructures of thin metal films.

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