Rutherford backscattering study of the oxidation of palladium silicide on amorphous silicon substrates

1985 ◽  
Vol 4 (4) ◽  
pp. 463-466 ◽  
Author(s):  
Juh Tzeng Lue ◽  
Chan Syun Yang
Keyword(s):  
Amorphous Silicon ◽  
Rutherford Backscattering ◽  
Silicon Substrates ◽  
Palladium Silicide

High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

1998 ◽  
Vol 45 (9) ◽  
pp. 2085-2088 ◽  
Author(s):  
Jyh-Jier Ho ◽  
Y.K. Fang ◽  
Kun-Hsien Wu ◽  
W.T. Hsieh ◽  
S.C. Huang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Infrared Sensors ◽  
Amorphous Silicon Germanium

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

Luminescence from erbium oxide grown on silicon

2001 ◽  
Vol 692 ◽  
Author(s):  
E. Nogales ◽  
B. Méndez ◽  
J. Piqueras ◽  
R. Plugaru ◽  
J. A. García ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Luminescence Spectra ◽  
Visible Range ◽  
Infrared Range ◽  
Silicon Substrates ◽  
Thermal Treatments ◽  
Erbium Oxide ◽  
Erbium Ions ◽  
Different Types ◽  
Substrate Properties

AbstractThe luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two types of substrates used are explained in terms of the different types of erbium centers formed by taking into account the substrate properties and the thermal treatments during growth. For comparison, erbium implanted and oxygen coimplanted crystalline and amorphous silicon have been also investigated by luminescence techniques. In the implanted samples, the sharp transitions from erbium ions in the visible range were quenched and the main emission corresponds to the intraionic transitions in Er3+ ions in the infrared range peaked at 1,54 μm.

Amorphous Ge/Si Multilayer Structures as Models for Optical Memories

1992 ◽  
Vol 258 ◽  
Author(s):  
K. Järrendahl ◽  
R. Jansson ◽  
J.-E. Sundgren ◽  
H. Arwin
Keyword(s):  
Amorphous Silicon ◽  
Photon Energy ◽  
Crystalline Silicon ◽  
Memory Device ◽  
Multilayer Structures ◽  
Silicon Substrates ◽  
Angle Of Incidence ◽  
Memory Cells ◽  
Optical Memories ◽  
Instrumental Resolution

ABSTRACTPrototype memory cells of a proposed three-bit memory device, whose optical read-out is based on the ellipsometric principle, nas been fabricated by deposition of 5 nm layers of amorphous silicon and amorphous germanium on crystalline silicon substrates. The differences in the ellipsometric parameters of memory cells corresponding to different logical states were much larger than the instrumental resolution. The possibility to optimize with respect to photon energy and angle of incidence is demonstrated.

Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

1989 ◽  
Vol 158 ◽  
Author(s):  
P. John ◽  
I.M. Odeh ◽  
A. Qayyum ◽  
J.I.B. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Silicon Substrates ◽  
Capacitively Coupled ◽  
X Ray ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Ti-silicide with improved thermal stability using silicidation through oxide on amorphous silicon substrates

1993 ◽  
Vol 12 (21) ◽  
pp. 1726-1728
Author(s):  
Y. S. Hwang ◽  
S. H. Paek ◽  
S. G. Kang ◽  
H. C. Cho ◽  
J. S. Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Amorphous Silicon ◽  
Silicon Substrates

Instability of Nanocavities in Disordered and Amorphous Silicon Under Ion Irradiation

1998 ◽  
Vol 540 ◽  
Author(s):  
X. Zhu ◽  
J.S. Williams ◽  
J.C. McCallum
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Irradiation Dose ◽  
Crystalline Silicon ◽  
Ion Irradiation ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Open Volume ◽  
Transmission Electron

AbstractIt has recently been shown that a band of nanocavities in crystalline silicon is eliminated during amorphization of the silicon surrounding this band [4]. In this study, we examine the effect of irradiation dose on nanocavity stability. Gettering of Au is used as a detector for open volume defects following annealing of irradiated samples. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy have been used to analyse the samples. Cavities are only completely removed when the region surrounding the cavities is totally amorphized up to the surface. Partial amorphization leaves residual open volume defects.

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