Capacitance voltage characteristics of sol-gel derived lead titanate thin films on a silicon substrate

1991 ◽  
Vol 2 (1) ◽  
pp. 58-62 ◽  
Author(s):  
Jeon-Kook Lee ◽  
Chong Hee Kim ◽  
Hyung-Jin Jung
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Lead Titanate ◽  
Sol Gel ◽  
Capacitance Voltage

Metastable Pyrochlore Structures in Sol Gel Spin Coated Lead Titanate Thin Films on Silicon Substrate

1991 ◽  
Vol 230 ◽  
Author(s):  
Jeon-Kook Lee ◽  
Hyung-Jin Jung ◽  
Chong-Hee Kim
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Spin Coating ◽  
Lead Titanate ◽  
Random Network ◽  
Sol Gel ◽  
Pyrochlore Structure ◽  
Native Oxide ◽  
Silicon Substrates ◽  
Heat Treated

AbstractHigh quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2 ' area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 500°C in films with thickness above 0.36μm.Metastable pyrochlore structures were observed in films with thickness of 0.16,μm when heat treated at 500 and 600 °C. But these structure did not appear in films with thickness of 0.36μm.The thickness dependencein crystal structure of films was studied by varing the substrate condition and analyzing the interface between the.film and. substrate. In native oxide films on silicon substrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide (cubic property in random network structure).

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Characteristics of sol-gel derived PZT thin films with lead oxide cover layers and lead titanate interlayers

1996 ◽  
Vol 31 (17) ◽  
pp. 4559-4568 ◽  
Author(s):  
C. Lee ◽  
S. Kawano ◽  
T. Itoh ◽  
T. Suga
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Lead Oxide ◽  
Sol Gel ◽  
Pzt Thin Films

Characterisation of Ferroelectric Lithium Tantalate Thin Films Prepared by a Sol-Gel Process

1993 ◽  
Vol 321 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Single Crystal ◽  
Silicon Substrate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Pyroelectric Coefficient ◽  
Crystal Silicon ◽  
Sol Gel Process

ABSTRACTThin LiTaO3 films were prepared by spin coating of polymerized sol-gel precursor solution. Films have been deposited on single crystal silicon substrate, Ti/Pt or SiO2 coated silicon substrate. Films were characterized by x-ray diffraction, dielectric and pyroelectric Measurements. High Curie temperature (above 550 °C) was assumed for LiTaO3 thin films from the temperature dependence of dielectric constant. Replacing 35% of tantalum by titanium atoms in the LiTaO3 precursor solution has resulted the thin films with Curie temperature of 330 °C. The lower Curie temperature leads to the larger pyroelectric coefficient at room-temperature, which is more than double that of the undoped LiTaO3 thin films. The dielectric, pyroelectric, and ferroelectric properties have been compared to the single crystal LiTaO3 and ceramic Li0.91Ta0.73Ti0.36O3. LiTaO3 thin films are available by sol-gel process at low temperature, and their properties may possibly be controlled by varying the composition of the sol-gel precursor solution.

Dielectric and I-V Characteristic of Lead Titanate Thin Films Prepared on ITO Glass Substrate

2015 ◽  
Vol 1109 ◽  
pp. 461-465 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohd Hafiz Wahid ◽  
Mohammad Rusop
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
High Performance ◽  
Annealing Temperature ◽  
Low Cost ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Ito Glass

Performance of lead titanate, (PbTiO3) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO3offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO3thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO3thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.

Preparation of highly c-axis oriented Sr0.6Ba0.4Nb2O6 thin films grown on Silicon substrate by the sol–gel process

2006 ◽  
Vol 99 (1) ◽  
pp. 10-14 ◽  
Author(s):  
Zhiru Shen ◽  
Hui Ye ◽  
C.L. Mak ◽  
K.H. Wong ◽  
T.Y. Yum ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Sol Gel ◽  
Sol Gel Process
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