Excimer-laser-pumped ps-dye laser

1984 ◽  
Vol 33 (2) ◽  
pp. 95-98 ◽  
Author(s):  
S. Szatm�ri ◽  
F. P. Sch�fer
Keyword(s):  
Excimer Laser ◽  
Dye Laser

Picosecond dye laser pumped by an excimer laser

1985 ◽  
Vol 24 (13) ◽  
pp. 1910 ◽  
Author(s):  
Zsolt Bor ◽  
Bela Racz
Keyword(s):  
Excimer Laser ◽  
Dye Laser

scholarly journals Observation of the aathosis area in aorta with an angioscope-fluorescence analyzing system using an excimer-laser pumped dye laser.

1989 ◽  
Vol 17 (12) ◽  
pp. 862-866
Author(s):  
Katsuo AIZAWA ◽  
Hirobumi KAWABE ◽  
Yukari YASUNAKA ◽  
Yoshihiro TAMACHI
Keyword(s):  
Excimer Laser ◽  
Dye Laser

Melting and Laser Annealing in Semiconductors using 0.485 μm and 0.193 μm Pulsed Lasers

1980 ◽  
Vol 2 ◽  
Author(s):  
J. Narayan ◽  
J. Fletcher ◽  
R. E. Eby
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Convincing Evidence ◽  
Dye Laser ◽  
Pulsed Lasers ◽  
Displacement Damage ◽  
Melting Phenomenon ◽  
Pulsed Laser Irradiation

ABSTRACTAnnealing of displacement damage, the dissolution of boron precipitates, the formation of constitution supercooling cells, and the broadening of dopant profiles have been studied in laser annealed silicon. These samples were irradiated with a dye laser (λ = 0.485 µm, τ = 9 ns, E = 0.7–1.2 J cm−2) and an Excimer laser (λ = 0.193 µm, τ= 9 ns, E = 0.5–0.7 J cm−2) pulses. These results can be consistently interpreted by invoking melting during pulsed laser irradiation. Thus these results provide convincing evidence for the melting phenomenon.

Excimer-laser pumped infrared dye laser at 907–1023 nm

1989 ◽  
Vol 70 (3) ◽  
pp. 223-224 ◽  
Author(s):  
L.A. Bloomfield
Keyword(s):  
Excimer Laser ◽  
Dye Laser
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