Nucleation and crystal growth in gold electrodeposition from acid solution Part II: Hard gold

1996 ◽  
Vol 26 (8) ◽  
pp. 853-863 ◽  
Author(s):  
Y. G. Li ◽  
A. Lasia
Keyword(s):  
Crystal Growth ◽  
Acid Solution ◽  
Hard Gold

Nucleation and crystal growth in gold electrodeposition from acid solution Part I: Soft gold

1996 ◽  
Vol 26 (8) ◽  
pp. 843-852 ◽  
Author(s):  
Y. G. Li ◽  
W. Chrzanowski ◽  
A. Lasia
Keyword(s):  
Crystal Growth ◽  
Acid Solution

XRD Study of Lead Sulphate Crystal Growth in a Sulphuric Acid Solution

2016 ◽  
Vol 74 (1) ◽  
pp. 147-155 ◽  
Author(s):  
L. Chladil ◽  
O. Cech ◽  
P. Vanysek
Keyword(s):  
Crystal Growth ◽  
Acid Solution ◽  
Sulphuric Acid ◽  
Sulphuric Acid Solution ◽  
Lead Sulphate ◽  
Xrd Study

Extended Preservation of Iron for Transmission

1967 ◽  
Vol 25 ◽  
pp. 354-355
Author(s):  
E. P. Abrahamson II ◽  
M. W. Dumais
Keyword(s):  
Acid Solution ◽  
Perchloric Acid ◽  
Microscopy Study ◽  
Perchloric Acid Solution ◽  
Transmission Microscopy ◽  
Iron Base ◽  
Cold Stage

In a transmission microscopy study of iron and dilute iron base alloys, it was determined that it is possible to preserve specimens for extended periods of time. Our specimens were prepunched from 5 to 8 mil sheet to microscope size and annealed for several hours at 700°C. They were then thinned in a glacial acetic-12 percent perchloric acid solution using 10 volts and 20 milliamperes, at a temperature of 8 to 14°C.It was noted that by the use of a cold stage, the same specimen can be observed for periods up to one week without excess contamination. When removal of the specimen from the column becomes necessary, it was observed that a specimen may be kept for later observation in 1,2 dichloroethene or methanol for periods in excess of two weeks.

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

Deposited emulsion particles in the pores of aluminum oxide film

1978 ◽  
Vol 36 (1) ◽  
pp. 450-451
Author(s):  
Michio Ashida ◽  
Yasukiyo Ueda
Keyword(s):  
Oxide Film ◽  
Acid Solution ◽  
Barrier Layer ◽  
Colloidal Particles ◽  
Oxalic Acid Solution ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Carbon Replica ◽  
Sectioning Method ◽  
Thin Sectioning

An anodic oxide film is formed on aluminum in an acidic elecrolyte during anodizing. The structure of the oxide film was observed directly by carbon replica method(l) and ultra-thin sectioning method(2). The oxide film consists of barrier layer and porous layer constructed with fine hexagonal cellular structure. The diameter of micro pores and the thickness of barrier layer depend on the applying voltage and electrolyte. Because the dimension of the pore corresponds to that of colloidal particles, many metals deposit in the pores. When the oxide film is treated as anode in emulsion of polyelectrolyte, the emulsion particles migrate onto the film and deposit on it. We investigated the behavior of the emulsion particles during electrodeposition.Aluminum foils (99.3%) were anodized in either 0.25M oxalic acid solution at 30°C or 3M sulfuric acid solution at 20°C. After washing with distilled water, the oxide films used as anode were coated with emulsion particles by applying voltage of 200V and then they were cured at 190°C for 30 minutes.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

Sign in / Sign up

Export Citation Format

Share Document