Apparatus for producing pure nitrogen ? hydrogen atmosphere from natural gas

1976 ◽  
Vol 18 (3) ◽  
pp. 268-270
Author(s):  
B. M. �strin ◽  
V. N. Bryzgalin ◽  
V. E. Bakhirev
Science ◽  
1942 ◽  
Vol 95 (2461) ◽  
pp. 223-224
Author(s):  
Harold J. Cook
Keyword(s):  

2019 ◽  
Vol 24 (3) ◽  
pp. 34-41
Author(s):  
Tadeusz Żółciak ◽  
Zbigniew Łataś

Nitriding of 41CrAlMo7 steel was carried out in a fluidized bed of aluminum oxide at a constant temperature of 570oC/4h in ammonia with technical nitrogen or with nitrogen-hydrogen mixture. Carbonitriding was carried out in ammonia with technical nitrogen for two different carbon carriers. In addition, one process was carried out in ammonia with the addition of 5% propane. The influence of diluting ammonia with pure and technical nitrogen upon the hardness and thickness of the nitrided layer was investigated. The hardness and thickness of the carbonitrided layer in ammonia with technical nitrogen and natural gas or carbon dioxide were compared with the parameters of the layer carbonitrided in ammonia and propan. High surface hardness and thickness of the nitrided layer were obtained with the participation of 70% of pure nitrogen or 30% of technical nitrogen in a mixture with ammonia after preliminary oxidation at 350oC/ 30min in air. In case of carbonitriding, the highest hardness and thickness of the nitrided layer were obtained in a mixture of ammonia with and the addition of 5% propane, and the highest thickness of the nitride compound zone in a mixture of ammonia and technical nitrogen with the addition of natural gas or carbon dioxide.


Science ◽  
1942 ◽  
Vol 95 (2461) ◽  
pp. 223-224
Author(s):  
H. J. COOK
Keyword(s):  

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
Peter Bury ◽  
Hikaru Kobayashi ◽  
Masao Takahashi ◽  
Kentaro Imamura ◽  
Peter Sidor ◽  
...  

AbstractUltrathin silicon dioxide (SiO2) layers formed on Si substrate with nitric acid have been investigated using both acoustic deep-level transient spectroscopy (A-DLTS) and electrical methods to characterize the interface states. The set of SiO2/Si structures formed in different conditions (reaction time, concentrations of nitric acid (HNO3), and SiO2 thickness [3–9 nm]) was prepared. The leakage current density was decreased by post-oxidation annealing (POA) treatment at 250°C in pure nitrogen for 1 h and/or post-metallization annealing (PMA) treatment at 250°C in a hydrogen atmosphere for 1 h. All structures of the set, except electrical investigation, current-voltage (I - V), and capacitance — voltage (C - V) measurements, were investigated using A-DLTS to find both the interface states distribution and the role of POA and/or PMA treatment on the interface-state occurrence and distribution. The evident decreases of interface states and shift of their activation energies in the structures with PMA treatment in comparison with POA treatment were observed in most of the investigated structures. The results are analyzed and discussed.


2014 ◽  
Vol 2014 (1) ◽  
pp. 000729-000734 ◽  
Author(s):  
Linda Rudmann ◽  
Juan S. Ordonez ◽  
Hans Zappe ◽  
Thomas Stieglitz

Within this paper a novel approach for the development of hermetic electrical feedthroughs is introduced. So far, every vertical feedthrough induces at the feedthroughs' interfaces possible paths for water to leak across the hermetic barrier into the hermetic package. The presented approach is based on the diffusion of platinum into silicon, locally changing the electrical behavior of the substrate due to the induced impurities. This method avoids destroying the bulk material, in this case silicon, preserving the hermetic barrier environment. Different n-type silicon substrates were investigated for their usability through various diffusion experiments under two gas atmospheres: Argon/hydrogen and pure nitrogen. A significant change in silicon behavior could be shown for one of the used substrates. The current flowing through the bulk could be decreased by a factor of around 12 for an argon/hydrogen atmosphere and by around 10 for pure nitrogen. The current directly correlates with a local increase of the substrates' resistance, demonstrating the possibility of adapting the electrical properties of a substrate to create insulating areas within a conductive substrate.


Science ◽  
1942 ◽  
Vol 95 (2461) ◽  
pp. 223-224
Author(s):  
Harold J. Cook
Keyword(s):  

Author(s):  
M. Boublik ◽  
G. Thornton ◽  
G. Oostergetel ◽  
J.F. Hainfeld ◽  
J.S. Wall

Understanding the structural complexity of ribosomes and their role in protein synthesis requires knowledge of the conformation of their components - rRNAs and proteins. Application of dedicated scanning transmission electron microscope (STEM), electrical discharge of the support carbon film in an atmosphere of pure nitrogen, and determination of the molecular weight of individual rRNAs enabled us to obtain high resolution electron microscopic images of unstained freeze-dried rRNA molecules from BHK cells in a form suitable for evaluation of their 3-D structure. Preliminary values for the molecular weight of 28S RNA from the large and 18S RNA from the small ribosomal subunits as obtained by mass measurement were 1.84 x 106 and 0.97 x 106, respectively. Conformation of rRNAs consists, in general, of alternating segments of intramolecular hairpin stems and single stranded loops in a proportion which depends on their ionic environment, the Mg++ concentration in particular. Molecules of 28S RNA (Fig. 1) and 18S RNA (not shown) obtained by freeze-drying from a solution of 60 mM NH+4 acetate and 2 mM Mg++ acetate, pH 7, appear as partially unfolded coils with compact cores suggesting a high degree of ordered secondary structure.


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