Application of Gibbs-Duhem's equation to a pure p-type semiconducting oxide and to its solid solutions with oxides containing homovalent or heterovalent cations

1984 ◽  
Vol 22 (5-6) ◽  
pp. 277-289 ◽  
Author(s):  
F. Gesmundo
Keyword(s):  
Author(s):  
Ryota Kobayashi ◽  
Junichi Tatami ◽  
Toru Wakihara ◽  
Katsutoshi Komeya ◽  
Takeshi Meguro ◽  
...  

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.


2019 ◽  
Vol 7 (2) ◽  
pp. 434-440 ◽  
Author(s):  
Ting Zhou ◽  
Jun Mao ◽  
Jing Jiang ◽  
Shaowei Song ◽  
Hangtian Zhu ◽  
...  

The thermoelectric property of YbMg2Bi2–Mg3Bi2 solid solution is studied.


2015 ◽  
Vol 16 (4) ◽  
pp. 706-710
Author(s):  
G.Ya. Gurgula ◽  
T.P. Vintonyak ◽  
O.V. Yaremiychuk

A Crystal-formulas defined dominant point defects in solid solutions CdxZn1-x Te for n-and p-type conductivity output binary compounds ZnS and ZnTe. Dependence of the concentration of defects, free carriers and Hall concentration on the composition of the solid solutions.


2021 ◽  
Vol 24 (1) ◽  
pp. 22-25
Author(s):  
Z.M. Saparniyazova ◽  
◽  
K.A. Ismailov ◽  
Kh.U. Kamalov ◽  
◽  
...  

In this paper, the results of studies of the effect of the diffusion temperature on interaction of clusters of manganese atoms with the sulfur ones have been presented. It has been shown that the electrical parameters of the samples simultaneously doped with sulfur and manganese completely coincide with the parameters of the initial material, i.e. as if they do not contain not only sulfur and manganese, but also thermodonors are not formed. The obtained results make it possible to exclude the possibility of gettering of impurity atoms or formation of some kind of solid solutions, if taking into account the impurity atoms of manganese and sulfur, which complicates their diffusion in the crystal bulk. It has been established that for the initial p-type silicon with the resistivity close to p ~ 10 Ω·cm, the diffusion temperature of 1100 °C is the most optimal one to form clusters with the maximum participation of the introduced sulfur and manganese atoms.


2006 ◽  
Vol 48 (8) ◽  
pp. 1486-1490 ◽  
Author(s):  
M. I. Fedorov ◽  
V. K. Zaĭtsev ◽  
I. S. Eremin ◽  
E. A. Gurieva ◽  
A. T. Burkov ◽  
...  

Author(s):  
M.I. Fedorov ◽  
V.K. Zaitsev ◽  
G.N. Isachenko ◽  
I.S. Eremin ◽  
E.A. Gurieva ◽  
...  

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