scholarly journals Crystal-Chemistry of Point Defects and Mechanisms Formation of Solid Solutions CdxZn1-xTe

2015 ◽  
Vol 16 (4) ◽  
pp. 706-710
Author(s):  
G.Ya. Gurgula ◽  
T.P. Vintonyak ◽  
O.V. Yaremiychuk
Keyword(s):  
Crystal Chemistry ◽  
Solid Solutions ◽  
Point Defects ◽  
Type Conductivity ◽  
Free Carriers ◽  
Dominant Point ◽  
Binary Compounds ◽  
P Type

A Crystal-formulas defined dominant point defects in solid solutions CdxZn1-x Te for n-and p-type conductivity output binary compounds ZnS and ZnTe. Dependence of the concentration of defects, free carriers and Hall concentration on the composition of the solid solutions.

DEFECT PHYSICS AND INTRINSIC p-TYPE CONDUCTIVITY IN TOPOLOGICAL INSULATOR AuTlS2

2014 ◽  
Vol 28 (02) ◽  
pp. 1450008 ◽  
Author(s):  
JIAN-MIN ZHANG ◽  
WANGXIANG FENG ◽  
PEI YANG ◽  
LIJIE SHI ◽  
YING ZHANG
Keyword(s):  
Point Defects ◽  
Topological Insulator ◽  
First Principles ◽  
Optimal Growth ◽  
Growth Conditions ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Native Point Defects ◽  
P Type ◽  
Optimal Growth Condition

Using first-principles calculations, we systematically investigate the defect physics in topological insulator AuTlS 2. An optimal growth condition is explicitly proposed to guide for the experimental synthesis. The stabilities of various native point defects under different growth conditions and different carrier environments are studied in detail. We show that the p-type conductivity is strongly preferred in AuTlS 2, and the band gap can be engineered by the control of intrinsic defects. Our results demonstrate that AuTlS 2 is an ideal p-type topological insulator which can be easily integrated with traditional semiconductor.

Transport properties of Mg2 X 0.4Sn0.6 solid solutions (X = Si, Ge) with p-type conductivity

2006 ◽  
Vol 48 (8) ◽  
pp. 1486-1490 ◽  
Author(s):  
M. I. Fedorov ◽  
V. K. Zaĭtsev ◽  
I. S. Eremin ◽  
E. A. Gurieva ◽  
A. T. Burkov ◽  
...  
Keyword(s):  
Transport Properties ◽  
Solid Solutions ◽  
Type Conductivity ◽  
P Type

scholarly journals Point defects and p-type conductivity in Zn1–xMnxGeAs2

2014 ◽  
Vol 116 (2) ◽  
pp. 023501 ◽  
Author(s):  
L. Kilanski ◽  
C. Rauch ◽  
F. Tuomisto ◽  
A. Podgórni ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Point Defects ◽  
Type Conductivity ◽  
P Type

scholarly journals Study on Cu2ZnSnSe4 crystals and heterojunctions on their basis

2018 ◽  
pp. 37-43
Author(s):  
T. T. Kovaliuk ◽  
E. V. Maistruk ◽  
M. N. Solovan ◽  
I. P. Koziarskyi ◽  
P. D. Maryanchuk
Keyword(s):  
Solid Solutions ◽  
Charge Carriers ◽  
Kinetic Properties ◽  
Shunt Resistance ◽  
Recombination Mechanism ◽  
Energy Diagram ◽  
Voltage Range ◽  
Type Conductivity ◽  
Mobility Of Charge Carriers ◽  
P Type

The most promising materials for the solar radiation converters are such compounds as CdTe and Cu(In, Ga)Se2, CuIn(S, Se)2, CuGa(S, Se)2 solid solutions. However, the uneconomic nature of Cd, Te and the limited supply of In and Ga, as well as their high cost, force researchers to replace In and Ga with the more common elements of II and IV groups, namely Zn and Sn. Apart from that, researchers are now testing such new semiconductor compounds as Cu2ZnSnS4, Cu2ZnSnSe4, and solid solutions on their basis. These compounds have a band gap width (Eg ≈ 1.5 eV) close to optimal for the conversion of solar energy, a high light absorption coefficient (≈ 105cm–1), a long lifetime and a high mobility of charge carriers. Moreover, the interest in such semiconductor heterojunctions as TiO2/Cu2ZnSnS4, which have several advantages over homo-transitions, is steadily growing at present. The paper presents results studies of kinetic properties of Cu2ZnSnSe4 crystals. We fabricated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions, determined their main electrical parameters and built their energy diagram. The Cu2ZnSnSe4 crystals have p-type conductivity and the Hall coefficient practically independent of temperature. The temperature dependence of the electrical conductivity σ for Cu2ZnSnSe4 crystalsis metallic in character, i. e. σ decreases with increasing temperature, which is caused by a decrease in the mobility of the charge carriers with the growth of T. Thermoelectric power for the samples is positive, which also indicates the prevalence of p-type conductivity. In this study, the n-TiO2/p-Cu2ZnSnSe4 heterojunctions were produced by reactive magnetron sputtering of a thin TiO2 film on the Cu2ZnSnSe4 substrate. The energy diagram of the investigated n-TiO2/p-Cu2ZnSnSe4 anisotype heterojunctions was constructed in accordance with the Anderson model, without taking into account the surface electrical states and the dielectric layer, based on the values of the energy parameters of semiconductors determined experimentally and taken from literary sources. The authors have also investigated electrical properties of the heterojunctions: the value of the potential barrier was determined, the value of the series resistance and shunt resistance (respectively, Rs = 8 W and Rsh = 5.8 kW) at room temperature. The dominant mechanisms of current transfer were established: tunneling-recombination mechanism in the voltage range from 0 to 0.3 V, and over-barrier emission and tunneling with inverse displacement in the voltage range from 0.3 to 0.45 V.

scholarly journals Исследование особенностей формирования и свойств полупроводников А-=SUP=-3-=/SUP=-В-=SUP=-5-=/SUP=-, сильно легированных железом

2018 ◽  
Vol 60 (11) ◽  
pp. 2137
Author(s):  
Ю.А. Данилов ◽  
А.В. Кудрин ◽  
В.П. Лесников ◽  
О.В. Вихрова ◽  
Р.Н. Крюков ◽  
...  
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Hall Resistance ◽  
Hysteresis Curve ◽  
Layer Formation ◽  
Type Conductivity ◽  
P Type ◽  
The Magnetic Field

Abstract —Layers of InAs, InSb, and GaSb semiconductors highly doped with iron during their growth by the method of pulsed laser deposition are studied experimentally. The best temperatures for layer formation on GaAs (100) substrates are: 250°C (InSb : Fe), 300°C (InAs : Fe), and 350°C (GaSb : Fe). At high Fe concentration (over 10 at %) the layers display ferromagnetic properties expressed in emergence of a hysteresis curve within the magnetic field dependences of the Hall resistance, negative magnetoresistance, and in some cases, ferromagnetic-type magnetization at measurements at room temperature. The atoms of iron do not change the type of layer conductivity; InAs : Fe and InSb : Fe layers possess n -type conductivity, and GaSb : Fe layers display p -type conductivity due to their intrinsic point defects.

scholarly journals Crystal-Quasichemical Analysis of Defect Subsystem of Doped PbTe: Sb Crystals and Pb-Sb-Te Solid Solutions

2014 ◽  
Vol 1 (1) ◽  
pp. 55-63
Author(s):  
D.M. Freik ◽  
L.V. Turovska
Keyword(s):  
Solid Solution ◽  
Solid Solutions ◽  
Point Defects ◽  
Solid Solution Formation ◽  
Basic Matrix ◽  
Cation Vacancies ◽  
Initial Deviation ◽  
Solution Formation ◽  
Deviation From Stoichiometry ◽  
Dominant Point

Within crystalquasichemical formalism models of point defects of crystals in the Pb-Sb-Te system were specified. Based on proposed crystalquasichemical formulae of antimony doped crystals PbTe:Sb amphoteric dopant effect was explained. Mechanisms of solid solution formation for РbТе-Sb2Те3: replacement of antimony ions lead sites  with the formation of cation vacancies  (I) or neutral interstitial tellurium atoms  (II) were examined. Dominant point defects in doped crystals PbTe:Sb and РbТе-Sb2Те3 solid solutions based on p-PbTe were defined. Dependences of concentration of dominant point defects, current carriers and Hall concentration on content of dopant compound and the initial deviation from stoichiometry in the basic matrix were calculated.

scholarly journals Engineering of Point Defects and Formation Mechanisms of PbTe–CdTe Solid Solutions

2016 ◽  
Vol 17 (3) ◽  
pp. 375-380
Author(s):  
T.P. Tsymbalyuk
Keyword(s):  
Solid Solutions ◽  
Point Defects ◽  
Charge Carriers ◽  
Formation Mechanisms ◽  
Binary Solutions ◽  
Dominant Point

The crystal-quasichemical formulas were proposed in paper. There were obtain the dominant point defects of Pb1-xCdxТе solid solutions on the base of initial binary solutions PbТе and CdTe of the n- and р-type of conductivity. The dependence of defect concentrations, such as charge carriers and Hall’s concentration due composition of solid solutions were calculated.

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