Isothermal capacitance transient spectroscopy (ICTS) study for midgap levels in Hb-GaAs by rapid thermal annealing

1989 ◽  
Vol 48 (4) ◽  
pp. 359-363 ◽  
Author(s):  
Hoon Young Cho ◽  
Eun Kyu Kim ◽  
Suk-Ki Min ◽  
Sung Ho Choh
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Plasma-Induced Electron Traps in n-InP

1995 ◽  
Vol 378 ◽  
Author(s):  
Yoshifumi Sakamoto ◽  
Takashi Sugino ◽  
Koichiro Matsuda ◽  
Junji Shirafuji
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Thermal Annealing ◽  
Hydrogen Plasma ◽  
Hydrogen Atoms ◽  
Plasma Exposure ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractDeep electron traps in n-InP introduced during plasma exposure have been studied by means of isothermal capacitance transient spectroscopy (ICTS). Three electron traps, (Ec–0.21 eV), (Ec–0.34 eV) and (Ec–0.54 eV), which are designated E2, E3 and E4, respectively, are detected in n-InP treated with H2 plasma and by subsequent annealing. The E2 trap is induced by plasma exposure and the E3 trap is produced by thermal annealing. The E4 trap is generated by both plasma exposure and thermal annealing. These three traps are passivated with hydrogen atoms. The E2 trap density near the surface of hydrogen-plasma-treated samples is strongly enhanced by applying electric field because of dissociation of hydrogen from E2 trap. The E2 trap is annealed out with the activation energy of 1.5 eV and the attempt-to-escape frequency of 3.2 × 1014 s−1. Phosphine plasma treatment is effective in suppressing generation of these electron traps.

Point Defect Evolution During Rapid Thermal Annealing of Si+-Implanted GaAs.

1987 ◽  
Vol 92 ◽  
Author(s):  
M. Levinson ◽  
C. A. Armiento ◽  
S. S. P. Shah
Keyword(s):  
Point Defect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Deep Level ◽  
Dopant Activation ◽  
Defect Reactions ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Dlts Spectra

ABSTRACTThe point defect reactions in GaAs by which ion implant damage is removed and implanted dopants are activated remain poorly understood. Deep level capacitance transient spectroscopy (DLTS) has been used to study the effects of rapid thermal annealing (RTA) on Si-implant damage generated defects. In low implant dose samples, the results of RTA are similar to those of furnace anneals and also agree well with previous reports of boron-implanted and neutron-irradiated material. In contrast to this, higher dose samples showed much smaller than expected apparent defect concentrations. After RTA, very broad DLTS spectra and relatively little EL2 or EL3 defect formation was observed. The significance of these results with regard to the mechanisms of dopant activation and damage removal are discussed.

Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs

1990 ◽  
Vol 67 (3) ◽  
pp. 1380-1383 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Suk‐Ki Min ◽  
Sung Ho Choh ◽  
Susumu Namba
Keyword(s):  
Leakage Current ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

Isothermal Capacitance Transient Spectroscopy in ZnO Varistor

1989 ◽  
Vol 28 (Part 2, No. 4) ◽  
pp. L714-L716 ◽  
Author(s):  
Takao Maeda ◽  
Sakae Meguro ◽  
Masasuke Takata
Keyword(s):  
Zno Varistor ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy
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