scholarly journals Determination oc carrier density dependent lifetime and quantum efficiency in semiconductors with a photoluminescence method (application to InGaAsP/InP heterostructures)

1987 ◽  
Vol 43 (2) ◽  
pp. 142-142
Author(s):  
J. Pietzsch ◽  
T. Kamiya
Keyword(s):  
Quantum Efficiency ◽  
Carrier Density ◽  
Density Dependent

Quantum Efficiency Measurements to Deduce Non-Ideal Solar-Cell Features

2007 ◽  
Vol 1012 ◽  
Author(s):  
Timothy J. Nagle ◽  
Alan R. Davies ◽  
James R. Sites
Keyword(s):  
Solar Cells ◽  
Quantum Efficiency ◽  
Carrier Density ◽  
Light Exposure ◽  
Light Level ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Standard Set ◽  
Dc Bias ◽  
Carrier Collection

AbstractAppropriate interpretation of quantum-efficiency (QE) measurements made on non-ideal solar cells often reveal subtle features of the photodiodes. QE measurements on CIGS and CdTe thin-film solar cells with CdS buffer layers demonstrate some of these features, and in each case we identify the electrical processes responsible. One well-known complication in cells with CdS buffer layers is “photodoping”, where blue light exposure increases the n-type CdS carrier density. The resulting modification of the p-n junction alters the carrier collection for all wavelengths and can lead to misinterpretation of results. The use of a white, DC-bias light during QE measurements generally solves this problem, but it has not been clear what bias light level is sufficient for accurate results. Measurements with varying intensities of DC-bias light show that complications due to CdS photoconductivity are generally mitigated near 0.05 sun intensity. Other factors which can cause misinterpretation of QE measurements include the presence of secondary barriers, and photoconductivity in the absorber layer. Numerical simulations of band profiles under various light-bias conditions are consistent with the experimental data. The analysis is used to suggest a standard set of measurement conditions for reliable QE analysis.

Carrier-density-dependent electron effective mass in Zn1−xMnxSe for 0⩽x⩽0.13

2005 ◽  
Vol 86 (18) ◽  
pp. 181907 ◽  
Author(s):  
K. C. Agarwal ◽  
B. Daniel ◽  
M. Grün ◽  
P. Feinäugle ◽  
C. Klingshirn ◽  
...  
Keyword(s):  
Effective Mass ◽  
Carrier Density ◽  
Electron Effective Mass ◽  
Density Dependent

Observation of Carrier-Density-Dependent Many-Body Effects in Graphene via Tunneling Spectroscopy

2010 ◽  
Vol 104 (3) ◽  
Author(s):  
Victor W. Brar ◽  
Sebastian Wickenburg ◽  
Melissa Panlasigui ◽  
Cheol-Hwan Park ◽  
Tim O. Wehling ◽  
...  
Keyword(s):  
Carrier Density ◽  
Tunneling Spectroscopy ◽  
Many Body ◽  
Density Dependent ◽  
Many Body Effects

scholarly journals Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN∕GaN quantum wells

2007 ◽  
Vol 90 (15) ◽  
pp. 151122 ◽  
Author(s):  
Chi-Feng Huang ◽  
Chih-Feng Lu ◽  
Tsung-Yi Tang ◽  
Jeng-Jie Huang ◽  
C. C. Yang
Keyword(s):  
Quantum Wells ◽  
White Light ◽  
Carrier Density ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Density Dependent

Improved Electrical Properties of Ga2O3:Sn/CIGS Hetero-Junction Photoconductor

2014 ◽  
Vol 1635 ◽  
pp. 83-88
Author(s):  
Kenji Kikuchi ◽  
Shigeyuki Imura ◽  
Kazunori Miyakawa ◽  
Hiroshi Ohtake ◽  
Misao Kubota ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Efficiency ◽  
Repetition Rate ◽  
Dark Current ◽  
Carrier Density ◽  
High Efficiency ◽  
Visible Region ◽  
Laser Frequency ◽  
Image Sensors ◽  
High Quantum Efficiency

ABSTRACTWe examined the potential application of CuIn1-xGaxSe1-ySy (CIGS) film for visible light image sensors. CIGS chalcopyrite semiconductors, which are representative of high efficiency thin film solar cells, have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. The dark current of this hetero-junction was 10-9 A/cm2 at less than 7 V. Moreover, an avalanche multiplication phenomenon was observed at an applied voltage of over 8 V. However, this structure had sensitivity only in the ultraviolet light region due to the much lower carrier density of the Ga2O3 layer. We therefore used a tin-doped Ga2O3 (Ga2O3:Sn) layer deposited by pulsed laser deposition (PLD) for the n-type layer to increase the carrier density. The sensitivity of the visible region was observed in the Ga2O3:Sn/CIGS hetero-junction. We also investigated the influence of the laser frequency of the PLD on the transmittance of Ga2O3:Sn and the quantum efficiency of this hetero-junction. Ga2O3:Sn film deposited at a 0.1-Hz laser repetition rate had higher transmittance than at a 10-Hz repetition rate. The Ga2O3:Sn/CIGS hetero-junction also had a higher quantum efficiency with the lower rate (50%) than with the higher rate (30%).

scholarly journals Carrier-Density-Dependent Lattice Stability in InSb

2007 ◽  
Vol 98 (12) ◽  
Author(s):  
P. B. Hillyard ◽  
K. J. Gaffney ◽  
A. M. Lindenberg ◽  
S. Engemann ◽  
R. A. Akre ◽  
...  
Keyword(s):  
Carrier Density ◽  
Lattice Stability ◽  
Density Dependent
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