Equilibrium segregation coefficient and liquid diffusion coefficient of some impurities in tellurium

1987 ◽  
Vol 43 (3) ◽  
pp. 219-222 ◽  
Author(s):  
A. Zaiour ◽  
M. Hage-Ali ◽  
J. M. Koebel ◽  
A. Bentz ◽  
P. Siffert
1985 ◽  
Vol 51 ◽  
Author(s):  
Atul Bansal ◽  
Arijit Bose

ABSTRACTRecent results by Coriell and Sekerka [J. Crystal Growth, 61, 499(1983)] on the oscillatory instability of a planar rapidly solidifying binary melt are extended to include diffusion in the solid phase. Under assumptions equivalent to those made by Coriell and Sekerka, it is shown that no matter how small the diffusion coefficient is in the solid, the system is stable to all oscillatory and non-oscillatory disturbance modes if the modified constitutional supercooling criterion is satisfied and if the nonriequilibrium segregation coefficient is zero. Thus, a range of the non-equilibrium segregation parameter exists where these results allow the possibility of instability, whereas Coriell and Sekerka predict that the system will be stable.System stability is increased for both oscillatory and non-oscillatory modes. It is necessary for the diffusivity ratio Ds/D1 to be nearly 0.1 before oscillatory modes are affected. Both the critical wavelength of the disturbance as well as the oscillation frequency are reduced slightly from the case where diffusion in the solid is ignored.


2010 ◽  
Vol 518 (9) ◽  
pp. 2409-2412 ◽  
Author(s):  
Toshinori Taishi ◽  
Yutaka Ohno ◽  
Ichiro Yonenaga

2018 ◽  
Vol 38 (1) ◽  
pp. 0112002
Author(s):  
夏燕 Xia Yan ◽  
孟伟东 Meng Weidong ◽  
陈艳 Chen Yan ◽  
宋芳嬉 Song Fangxi ◽  
普小云 Pu Xiaoyun

2015 ◽  
Vol 23 (11) ◽  
pp. 3026-3032
Author(s):  
杨瑞芬 YANG Rui-fen ◽  
翟影 ZHAI Ying ◽  
孙丽存 SUN Li-cun ◽  
孟伟东 MENG Wei-dong ◽  
普小云 PU Xiao-yun

2017 ◽  
Vol 25 (5) ◽  
pp. 5626 ◽  
Author(s):  
Weidong Meng ◽  
Yan Xia ◽  
Fangxi Song ◽  
Xiaoyun Pu

1980 ◽  
Vol 1 ◽  
Author(s):  
G. Battaglin ◽  
A. Carnera ◽  
G. Della Mea ◽  
P. Mazzoldi ◽  
A.K. Jain ◽  
...  

Mechanisms involved in laser processing of ion implanted semiconductors have been extensively investigated (1,2). Relatively little work has been done on implanted metals (3,10). The liquid solid interface (melt front) velocity in metals (11,12) is much larger than that in Si. Therefore several nonequilibrium effects on recrystallization (6) solute segregation (9) and metastable phase formation (4,6,7) are observed. Such effects would depend on the melt front velocity, equilibrium phase diagram considerations (such as equilibrium segregation coefficient Ko, miscibility in licuid phase, intermediate phases etc.) and also on the as implanted nonequilibrium phase and defect structure. In this paper we present a study of the influence of some of these parameters during laser treatment of sincle crystals of virgin Al and dilute implanted alloys of Mo and Cd in Al.


2017 ◽  
Vol 170 ◽  
pp. 68-76 ◽  
Author(s):  
Feishi Xu ◽  
Mélanie Jimenez ◽  
Nicolas Dietrich ◽  
Gilles Hébrard

1989 ◽  
Vol 163 ◽  
Author(s):  
Y. Itoh ◽  
M. Takai ◽  
H. Fukushima ◽  
H. Kirita

AbstractCarbon in LEC GaAs was found to be introduced as CO from the ambient atmosphere; the oxygen concentration in the crystals decreased with increase in the duration of melting. An equilibrium segregation coefficient of oxygen in GaAs crystals was found by charged particle activation analysis to be 0.1, the value of which was smaller by a factor of 3~4 than that reported before.


2016 ◽  
Vol 55 (8) ◽  
pp. 2011 ◽  
Author(s):  
Licun Sun ◽  
Chao Du ◽  
Qiang Li ◽  
Xiaoyun Pu

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