Film growth mechanism of photo-chemical vapor deposition

1988 ◽  
Vol 47 (3) ◽  
pp. 229-236 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

Growth Mechanism of YBa2Cu4O8(124) Phase in Metalorganic Chemical Vapor Deposition Film

1991 ◽  
Vol 30 (Part 2, No. 4B) ◽  
pp. L725-L727 ◽  
Author(s):  
Harumi Hayashi ◽  
Yasuji Yamada ◽  
Tsunemi Sugimoto ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Preparation and growth mechanism of one-dimensional NdB6 nanostructures: nanobelts, nanoawls, and nanotubes

RSC Advances ◽  
2016 ◽  
Vol 6 (48) ◽  
pp. 41891-41896 ◽  
Author(s):  
Wei Han ◽  
Yanming Zhao ◽  
Qinghua Fan ◽  
Qidong Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
One Dimensional

1D NdB6 nanostructures (nanobelts, nanoawls, and nanotubes) have been synthesized through a chemical vapor deposition (CVD) process with a self-catalyzed mechanism.

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament
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