Laser interferometry in the determination of electron concentration in plasma jets

1967 ◽  
Vol 7 (2) ◽  
pp. 143-144 ◽  
Author(s):  
A. A. Ovsyannikov ◽  
L. S. Polak ◽  
R. E. Rovinskii ◽  
A. G. Rozanov ◽  
N. N. Shvindt
Keyword(s):  
Electron Concentration ◽  
Laser Interferometry ◽  
Plasma Jets

Electron concentration measurements in combustion MHD flows by submillimeter laser interferometry

1977 ◽  
Vol 1 (4) ◽  
pp. 206-211 ◽  
Author(s):  
S.A. Self ◽  
F.O. Reigel ◽  
R.M. Clements ◽  
R.K. James
Keyword(s):  
Electron Concentration ◽  
Laser Interferometry ◽  
Mhd Flows ◽  
Submillimeter Laser ◽  
Concentration Measurements

Density Determination of Ices of Astrophysical Interest by Double-Laser Interferometry

2003 ◽  
pp. 489-489
Author(s):  
R. Luna ◽  
M. A. Satorre ◽  
G. Blanes ◽  
M. C. Santonja ◽  
M. Domingo ◽  
...  
Keyword(s):  
Laser Interferometry ◽  
Astrophysical Interest ◽  
Density Determination

Determination of surface profiles of transparent plates by means of laser interferometry with wavelength tuning

2019 ◽  
Vol 115 ◽  
pp. 59-66 ◽  
Author(s):  
Tao Sun ◽  
Weiwei Zheng ◽  
Yingjie Yu ◽  
Anand K. Asundi ◽  
Sergiy Valyukh
Keyword(s):  
Laser Interferometry ◽  
Wavelength Tuning ◽  
Surface Profiles

Electronic Transport Properties of Hg1-xFexSe

1986 ◽  
Vol 89 ◽  
Author(s):  
F. Pool ◽  
J. Kossut ◽  
U. Debska ◽  
R. Reifenberger ◽  
J. K. Furdyna
Keyword(s):  
Electron Concentration ◽  
Electronic Band Structure ◽  
Impurity Scattering ◽  
Concentration Data ◽  
Electronic Band ◽  
Scattering Effects ◽  
Temperature Electron ◽  
Charged Impurity Scattering ◽  
Fe Ions

AbstractThe electrical resistivity, electron concentration, and mobility of Hg1-xFexSe are reported for 4.2K < T < 300K and for 0.0001 < x < 0.12. The data are interpreted within an electronic band structure model that assumes the existence of resonant donors (due to the presence of Fe ions) whose ground state energy coincides with the conduction band continuum. The electron concentration data enable determination of the value of the donor energy as a function of the temperature and the crystal composition. The low temperature electron mobility for ∼ 0.0003 ≤ x ≤ 0.01 is considerably higher than expected and indicates a reduction of the charged impurity scattering effects at low temperatures.

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