Comparative study on phase formation in Al-Pd thin film by ion beam mixing and thermal annealing

1991 ◽  
Vol 26 (3) ◽  
pp. 721-725 ◽  
Author(s):  
R. Y. Lee ◽  
J. H. Park ◽  
C. N. Whang
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Ion Beam ◽  
Ion Beam Mixing

Ion-beam mixing and thermal annealing of Al–Nb and Al–Ta thin films

1988 ◽  
Vol 3 (6) ◽  
pp. 1082-1088 ◽  
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. G. Mendiratta ◽  
P. R. Subramanian ◽  
D. M. Dimiduk
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Ion Beam ◽  
Amorphous Films ◽  
Individual Layer ◽  
Ion Beam Mixing ◽  
Partial Reaction ◽  
Complete Reaction ◽  
The Individual

Ion-beam mixing and thermal annealing of thin, alternating layers of Al and Nb, as well as Al and Ta, were investigated by selected area diffraction and Rutherford backscattcring. The individual layer thicknesses were adjusted to obtain the overall compositions as Al3Nb and Al3Ta. The films were ion mixed with 1 MeV Au+ ions at a dose of 1 × 1016 ions cm−2. Uniform mixing and amorphization were achieved for both Al−Nb and Al−Ta systems. Equilibrium crystalline A13Nb and Al13Ta phases were formed after annealing of ion mixed amorphous films at 400 °C for 1 h. Unmixed films, however, remained unreacted at 400 °C for 1 h. Partial reaction was observed in the unmixed film of Al–Nb at 400 °C for 6 h. After annealing at 500 °C for 1 h, a complete reaction and formation of Al3Nb and Al3Ta phases in the respective films were observed. The influence of thermodynamics on the phase formation by ion mixing and thermal annealing is discussed.

A Comparison of Thermal Annealing and Ion Beam Mixing in the Fe/Al Bilayer

1989 ◽  
Vol 112 (1) ◽  
pp. 105-114 ◽  
Author(s):  
M. A. Z. Vasconcellos ◽  
J. A. T. Borges da Costa ◽  
W. H. Schreiner ◽  
I. J. R. Baumvol
Keyword(s):  
Thermal Annealing ◽  
Ion Beam ◽  
Ion Beam Mixing

Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

2015 ◽  
Vol 17 (37) ◽  
pp. 24427-24437 ◽  
Author(s):  
Manju Bala ◽  
Compesh pannu ◽  
Srashti Gupta ◽  
Tripurari S. Tripathi ◽  
Surya K. Tripathi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Thermal Annealing ◽  
Ion Beam ◽  
Phase Evolution ◽  
Ion Beam Mixing ◽  
Power Enhancement

Thermoelectric power enhancement of ion beam synthesized Co–Sb alloy thin films.

Ion-beam mixing of Ni/Pd layers: I. Cascade mixing regime (low temperature)

1988 ◽  
Vol 3 (6) ◽  
pp. 1057-1062 ◽  
Author(s):  
U. G. Akano ◽  
D. A. Thompson ◽  
J. A. Davies ◽  
W. W. Smeltzer
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Heavy Ion ◽  
Square Root ◽  
Ion Beam Mixing ◽  
Dose Comparison ◽  
Mixing Regime ◽  
Constant Dose ◽  
Constant Dose Rate

A tomic mixing resulting from heavy-ion bombardment of thin-film Ni/Pd bilayers and thin Pd markers sandwiched between Ni layers has been investigated. Mixing experiments were performed over a temperature range 40–473 K, using 120 keV Ar+ and 145 keV Kr+ ions at a constant dose rate of 5.5 × 1012 ions cm −2s−1 for doses up to 4 × 1016cm−2. The resulting interdiffusion was measured, in situ, using Rutherford backscattering with 2−2.8 MeV 4He+ ions. The results showed that, for both markers and bilayers, the amount of mixing is similar for both configurations and varies linearly with the square root of the ion dose. Comparison of the induced mixing per ion, following irradiation at 40 K, shows that the mixing is dependent on the damage energy FD deposited at the interface region. The mixing is essentially athermal.

Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation

1992 ◽  
Vol 268 ◽  
Author(s):  
Ikasko C. Dehm ◽  
H. Ryssel
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Critical Dose ◽  
Incomplete Reaction ◽  
Abrupt Interface ◽  
Complete Formation

ABSTRACTIn this study, the critical dose for ion-beam mixing of Co and Si with Ge-ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited by sputtering on chemically cleaned, <100>-oriented Si and subsequently mixed with Ge ions at doses in the range of 2. 1014 to 1. 1015 cm−2. Silicidation was performed in a rapid thermal annealing (RTA) system at temperatures between 700° and 100°C. Rutherford backscattering measurements showed that annealing at 700°C results in an incomplete reaction when ion-beam mixing at a dose of 2.1014 cm−2 or no ion-beam mixing was performed. After annealing at 1000°C, TEM samples revealed an inhomogeneous CoSi2 film consisting of large grains embedded in the Si. Mixing at doses at or above 5.1014 cm−2 and subsequent RTA at 700°C resulted in uniform CoSi2 layers. Higher annealing temperatures cause larger grains and resistivity values as low as 18 μΩcm. Therefore, we demonstrated that the critical dose leading to complete formation of smooth CoSi2 films with abrupt interface is 5.1014 cm−2 which is nearly the same value as the amorphization dose of Ge in Si.

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