X-ray crystallographic data on aluminum silicon carbide, ?-Al4SiC4 and Al4Si2C5

1980 ◽  
Vol 15 (3) ◽  
pp. 575-580 ◽  
Author(s):  
Zenzaburo Inoue ◽  
Yoshizo Inomata ◽  
Hidehiko Tanaka ◽  
Haruo Kawabata
Keyword(s):  
Silicon Carbide ◽  
Crystallographic Data ◽  
X Ray ◽  
Aluminum Silicon Carbide ◽  
Aluminum Silicon

Chemical Interactions in the Aluminum-Carbon and Aluminum-Silicon Carbide Systems

1989 ◽  
Vol 170 ◽  
Author(s):  
Benji Maruyama ◽  
Fumio S. Ohuchi ◽  
L. Rabenberg
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Aluminum Carbide ◽  
Carbide Formation ◽  
Matrix Composites ◽  
X Ray ◽  
Oxidation Model ◽  
Aluminum Silicon Carbide ◽  
Kinetics Of ◽  
Aluminum Silicon

AbstractX-ray Photoelectron Spectroscopy (XPS) was used to investigate the influence of O2 and H2O on the formation of aluminum carbide at aluminum-carbon and aluminumsilicon carbide interfaces. It was determined that dosing the interfaces with H2O catalyzed the formation of aluminum carbide in both the aluminum-carbon and aluminum-silicon carbide systems. This result is consistent with the oxidation model of carbide formation [1], previously developed to understand the kinetics of aluminum carbide formation at graphite-aluminum interfaces. These results imply that the formation of aluminum carbide in graphite and silicon carbide reinforced metal matrix composites, which severely degrades the composite mechanical properties by degrading the fiber and interface strength [2], is catalyzed.

scholarly journals An Assessment of Mechanical Characteristics of Al 6061 Reinforced with SiC and Bagasse Fly Ash Hybrid MMC

2020 ◽  
Vol 9 (4) ◽  
pp. 1245-1252
Keyword(s):  
Silicon Carbide ◽  
Fly Ash ◽  
Mechanical Characteristics ◽  
Stir Casting ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural Applications ◽  
Aluminum Silicon Carbide ◽  
Aluminum Silicon

Material is one or more substances that form an object. Due to an attractive mechanical characteristic, materials are commonly selected for structural applications. Recently, the hybrid MMC has been developed and highly an innovative trend in material science. The current study is concentrated on the formation of an innovative hybrid MMC by utilizing aluminum, silicon carbide and fly ash particulates of bagasse. In this study, the physical characteristics of Aluminum 6061 were evaluated by adding Sic, fly ash particulates of bagasse and observed that this is the hardest substance. The compositions were added until the final level and a method of stir casting has been utilized to fabricate Al MMC. XRD ie x-ray diffraction was utilized to analyze the structural characterization of MMC and optical microscopy was utilized to analysis the microstructure on MMC. In this study, the mechanical characteristics like hardness, elongation, yield strength, UTS and density have been performed on MMC. Aluminum was added with 5% of silicon carbide and 10% of fly ash particles of bagasse in one case and in other case aluminum was added with 10% of fly ash particles of bagasse and 10% of silicon carbide. As a result, it was detected that there is an improvement in the hardness and UTS and a reduction in the density and elongation of the composites in comparison to plain aluminum. This shows that the aluminum-silicon carbide-fly ash particles of bagasse MMC substantially differ throughout all characteristics.

scholarly journals Prediction of Strain Rate of Aluminum/Silicon Carbide Using Gray Level Run-Length Matrices

2017 ◽  
Vol 11 (5) ◽  
Author(s):  
Ahmad E. Eladawi ◽  
Saad A. A. Sayed ◽  
Hammad T. Elmetwally ◽  
Tamer O. Diab
Keyword(s):  
Silicon Carbide ◽  
Strain Rate ◽  
Gray Level ◽  
Run Length ◽  
Aluminum Silicon Carbide ◽  
Aluminum Silicon

H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system

1991 ◽  
Vol 6 (6) ◽  
pp. 1131-1134 ◽  
Author(s):  
Benji Maruyama ◽  
Fumio S. Ohuchi
Keyword(s):  
Silicon Carbide ◽  
Aluminum Carbide ◽  
Carbide Formation ◽  
Matrix Composites ◽  
Silicon Carbon ◽  
Aluminum Silicon Carbide ◽  
Silicone Carbide ◽  
Microelectronic Components ◽  
Carbide System ◽  
Aluminum Silicon

Aluminum carbide was found to form catalytically at aluminum-silicon carbide interfaces upon exposure to water vapor. Samples, composed of approximately 2 nm thick layers of Al on SiC, were fabricated and reacted in vacuo, and analyzed using XPS. Enhanced carbide formation was detected in samples exposed to 500 Langmuirs H2O and subsequently reacted for 600 s at 873 K. The cause of the catalysis phenomenon is hypothesized to be the weakening of silicon-carbon bonds caused by very strong bonding of oxygen atoms to the silicon carbide surface. Aluminum carbide formation is of interest because of its degrading effect on the mechanical properties of aluminum/silicone carbide reinforced metal matrix composites, as well as its effect on the electrical properties of aluminum metallizations on silicon carbide layers in microelectronic components.

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