Dislocation etch pit formation on non-metallic crystals

1982 ◽  
Vol 17 (8) ◽  
pp. 2227-2238 ◽  
Author(s):  
K. Sangwal
Keyword(s):  
Etch Pit ◽  
Pit Formation ◽  
Dislocation Etch

Dislocation Etch Pit Formation on Cadmium Crystal

1973 ◽  
Vol 12 (10) ◽  
pp. 1647-1648 ◽  
Author(s):  
Hironobu Nishikawa
Keyword(s):  
Etch Pit ◽  
Pit Formation ◽  
Dislocation Etch

Dislocation Etch Pit Formation in Lithium Fluoride

1958 ◽  
Vol 29 (5) ◽  
pp. 747-754 ◽  
Author(s):  
J. J. Gilman ◽  
W. G. Johnston ◽  
G. W. Sears
Keyword(s):  
Lithium Fluoride ◽  
Etch Pit ◽  
Pit Formation ◽  
Dislocation Etch

Etch pit formation on metal films by wet chemicals

1999 ◽  
Vol 5 (1) ◽  
pp. 39-42 ◽  
Author(s):  
Chongmu Lee
Keyword(s):  
Metal Films ◽  
Etch Pit ◽  
Pit Formation

Etch-pit formation mechanism induced on HPHT and CVD diamond single crystals by H2 /O2 plasma etching treatment

2012 ◽  
Vol 209 (9) ◽  
pp. 1715-1720 ◽  
Author(s):  
M. Naamoun ◽  
A. Tallaire ◽  
F. Silva ◽  
J. Achard ◽  
P. Doppelt ◽  
...  
Keyword(s):  
Single Crystals ◽  
Formation Mechanism ◽  
Plasma Etching ◽  
Cvd Diamond ◽  
Etch Pit ◽  
Pit Formation ◽  
Diamond Single Crystals ◽  
O2 Plasma

Effects of Pretreatment on the Etch Pit Formation during the Electrochemical Etching of Aluminum

2007 ◽  
Vol 124-126 ◽  
pp. 1561-1564
Author(s):  
Jae Kwang Lee ◽  
Yun Ho Shin ◽  
Jin Wook Kang ◽  
Yong Sug Tak
Keyword(s):  
Electrochemical Etching ◽  
High Density ◽  
Aluminum Surface ◽  
Etch Pits ◽  
Phosphate Ion ◽  
Etch Pit ◽  
Pit Formation ◽  
Fluorosilicic Acid ◽  
Etching Behavior ◽  
Chemical Pretreatments

The effect of chemical pretreatments on the electrochemical etching behavior of aluminum was investigated with the topographic studies of surface and the analysis of initial potential transients. Two-step pretreatments with H3PO4 and H2SiF6 result in a high density of pre-etch pits on aluminum surface by the incorporation of phosphate ion inside the oxide film and the removal of surface layer by aggressive fluorosilicic acid solution. It generates a high density of etch pits during electrochemical etching and results in the capacitance increase of etched Al electrode by expanding the surface area, up to 61.3 μF/cm2 with the pretreatment solution of 0.5M H3PO4 at 65°C and 10 mM H2SiF6 at 45°C.

Effects of pretreatment on the aluminium etch pit formation

2009 ◽  
Vol 51 (7) ◽  
pp. 1501-1505 ◽  
Author(s):  
Jaekwang Lee ◽  
Jiyoung Kim ◽  
Jutae Kim ◽  
Junhee Lee ◽  
Hwayong Chung ◽  
...  
Keyword(s):  
Etch Pit ◽  
Pit Formation
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