Application of photoacoustic and photothermal techniques for heat conduction measurements in a free-standing chemical vapor-deposited diamond film

1993 ◽  
Vol 14 (6) ◽  
pp. 1201-1214 ◽  
Author(s):  
C. Glorieux ◽  
J. De Groote ◽  
J. Fivez ◽  
W. Lauriks ◽  
J. Thoen
Keyword(s):  
Heat Conduction ◽  
Diamond Film ◽  
Chemical Vapor ◽  
Photothermal Techniques ◽  
Free Standing ◽  
Chemical Vapor Deposited

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Blue‐violet electroluminescence and photocurrent spectra from polycrystalline chemical vapor deposited diamond film

1995 ◽  
Vol 67 (23) ◽  
pp. 3376-3378 ◽  
Author(s):  
C. Manfredotti ◽  
F. Wang ◽  
P. Polesello ◽  
E. Vittone ◽  
F. Fizzotti ◽  
...  
Keyword(s):  
Diamond Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Photocurrent Spectra

Effect of grain boundaries on carrier lifetime in chemical-vapor-deposited diamond film

2000 ◽  
Vol 77 (10) ◽  
pp. 1425-1427 ◽  
Author(s):  
Hitoki Yoneda ◽  
Kazutatsu Tokuyama ◽  
Riichi Yamazaki ◽  
Ken-ichi Ueda ◽  
Hironori Yamamoto ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Diamond Film ◽  
Carrier Lifetime ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

The mechanical enhancement of chemical vapor deposited diamond film by plasma low-pressure/high-temperature treatment

Carbon ◽  
2013 ◽  
Vol 65 ◽  
pp. 365-370 ◽  
Author(s):  
Sheng Liu ◽  
Jin-long Liu ◽  
Cheng-ming Li ◽  
Jian-chao Guo ◽  
Liang-xian Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Diamond Film ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Chemical Vapor Deposited

scholarly journals Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

APL Materials ◽  
2014 ◽  
Vol 2 (5) ◽  
pp. 056103 ◽  
Author(s):  
Garima Saraswat ◽  
Priti Gupta ◽  
Arnab Bhattacharya ◽  
Pratap Raychaudhuri
Keyword(s):  
Chemical Vapor ◽  
Free Standing ◽  
Chemical Vapor Deposited

Carbon Nanotube Array Thermal Interfaces on Chemical Vapor Deposited Diamond

2007 ◽  
Author(s):  
Baratunde A. Cola ◽  
Xianfan Xu ◽  
Timothy S. Fisher
Keyword(s):  
Carbon Nanotube ◽  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Photoacoustic Technique ◽  
Nanotube Array ◽  
Carbon Nanotube Array ◽  
Chemical Vapor Deposited ◽  
Cnt Arrays ◽  
Film Interface

Carbon nanotube (CNT) arrays have been directly synthesized on plasma-enhanced chemical vapor deposited diamond films in the same growth chamber. The diamond films were grown using a bias-enhanced nucleation technique that produces relatively smooth and flat films. The thermal resistances of the CNT array/diamond film interface were measured using a photoacoustic technique to be approximately 12 mm2·K/W at moderate pressures.

Fabrication of Diamond Nanopit arrays by Room-temperature Curing Nanoimprint Lithography Using Glass-like Carbon Molds

2012 ◽  
Vol 1395 ◽  
Author(s):  
Shuji Kiyohara ◽  
Chigaya Ito ◽  
Ippei Ishikawa ◽  
Hirofumi Takikawa ◽  
Yoshio Taguchi ◽  
...  
Keyword(s):  
Diamond Film ◽  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Mold Material ◽  
Oxygen Ion ◽  
Mask Material ◽  
Chemical Vapor Deposited ◽  
Etching Selectivity

ABSTRACTWe have proposed the use of glass-like carbon (GC), as mold material because the 27-maximum etching selectivity of polysiloxane film against GC, which was approximately sixtimes larger than that of polysiloxane film against chemical vapor deposited (CVD) diamond film. We have investigated the fabrication of diamond nanopit arrays by room-temperature curing nanoimprint lithography (RTC-NIL) using GC mold, as applications to the emitter and the micro-gear. The polysiloxane has in the state of sticky liquid at room-temperature and negative-exposure characteristic. Therefore, the polysiloxane was used as RTC-imprint resist material, and also used as electron beam (EB) resist (oxide mask) material in EB lithography. We have fabricated the cylindrical GC nanodot mold with 500 nm-diameter, 600 nm-height and 2 μm-pitch. We carried out RTC-NIL using GC mold under the following optimum conditions: time from spin-coating to imprint of 1 min, imprinting pressure of 0.5 MPa and imprinting time of 5min. Then, we have processed the diamond film with an electron cyclotron resonance (ECR) oxygen ion shower. We have fabricated diamond nanopit array with 250 nm-depth and 500 nm-diameter. The diameter of diamond nanopit pattern was in good agreement with that of GC mold. Moreover, the depth of the diamond nanopit patterns fabricated by RTC-NIL using cylindrical GC mold was three times larger than that using conical diamond mold.

Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers

2013 ◽  
Vol 103 (18) ◽  
pp. 181108 ◽  
Author(s):  
Priti Gupta ◽  
A. A. Rahman ◽  
Nirupam Hatui ◽  
Jayesh B. Parmar ◽  
Bhagyashree A. Chalke ◽  
...  
Keyword(s):  
Quantum Well ◽  
Chemical Vapor ◽  
Free Standing ◽  
Quantum Well Structures ◽  
Graphene Layers ◽  
Chemical Vapor Deposited

Preparation of Nanocrystalline Diamond Films on Molybdenum Substrate by Double Bias Method

2006 ◽  
Vol 315-316 ◽  
pp. 646-650 ◽  
Author(s):  
Feng Xu ◽  
Dun Wen Zuo ◽  
Wen Zhuang Lu ◽  
Xiang Feng Li ◽  
Bing Kun Xiang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Nucleation Density ◽  
Nanocrystalline Diamond Films ◽  
Chemical Vapor Deposited ◽  
Hot Filament ◽  
Polycrystalline Molybdenum

The synthesis of nanocrystalline diamond film on polycrystalline molybdenum substrates was carried out by using of self-made hot filament chemical vapor deposited (HFCVD) system. Positive bias voltage on the grid electrode on top of hot filaments and negative bias voltage on the substrate were applied. High purity and extremely smooth nanocrystalline diamond films were successfully prepared by using the double bias method. Raman, SEM, XRD and AFM results show that the diamond films obtained have grain sizes less than 20nm, nucleation density higher than 1011cm-1. The mechanism of double bias is also discussed in this paper. The positive grid bias increases the active, decomposition and ionization of hydrogen and methane molecules, while negative substrate bias helps positive carbon-containing ions bombard the substrate that leads to the high nucleation density of the diamond film.

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