Crystallization behaviour and phase coexistence at morphotrophic phase boundaries in PZT thin films prepared by sol-gel processing

1996 ◽  
Vol 31 (14) ◽  
pp. 3639-3642 ◽  
Author(s):  
V. Ontalus ◽  
C. Cobianu ◽  
F. Vasiliu ◽  
C. Parlog
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Phase Coexistence ◽  
Crystallization Behaviour ◽  
Phase Boundaries ◽  
Pzt Thin Films ◽  
Gel Processing

Phase Coexistence at MPB in PZT Thin Films prepared by Sol-Gel Processing

1997 ◽  
Vol 132-136 ◽  
pp. 1131-1134
Author(s):  
F. Vasiliu ◽  
C. Parlog ◽  
C. Cobianu ◽  
A. Ianculescu ◽  
V. Ontalus
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Phase Coexistence ◽  
Pzt Thin Films ◽  
Gel Processing

Sol-gel processing of PZT thin films: A review of the state-of-the-art and process optimization strategies

1995 ◽  
Vol 7 (1-4) ◽  
pp. 259-277 ◽  
Author(s):  
Robert W. Schwartz ◽  
Timothy J. Boyle ◽  
Steven J. Lockwood ◽  
Michael B. Sinclair ◽  
Duane Dimos ◽  
...  
Keyword(s):  
Thin Films ◽  
Process Optimization ◽  
State Of The Art ◽  
Sol Gel ◽  
The State ◽  
Pzt Thin Films ◽  
Gel Processing

Comparative Sol gel processing of PZT thin films

1995 ◽  
Vol 7 (1-4) ◽  
pp. 247-258 ◽  
Author(s):  
M. Sayer ◽  
G. Yi ◽  
M. Sedlar
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Processing

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Properties of Pzt Thin Films with 2CdO·B2O3 Glass Phase Additive

1991 ◽  
Vol 243 ◽  
Author(s):  
Keith G. Brooks ◽  
Jiayu Chen ◽  
K. R. Udayakumar ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Spin Coating ◽  
Glass Phase ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Coating Process ◽  
Pzt Thin Films ◽  
Gel Processing ◽  
Hysteresis Properties

AbstractLead zirconate titanate thin films containing 0-4 wt.% of 2CdO·B2O3 glass phase additive have been fabricated by sol-gel processing. Smooth dense perovskite films of approximately 3500Å thickness were formed on Si wafers by a multiple layer spin coating process followed by rapid thermal annealing. Remanent polarizations of up to 23μC/cm2 were measured. Hysteresis properties were found to be very sensitive to annealing time at 700°C, with remanence being maximized at 100-200 seconds.

scholarly journals Synthesis of Crack-Free PZT thin Films by Sol-gel Processing on Glass Substrate

2015 ◽  
Vol 11 ◽  
pp. 386-390 ◽  
Author(s):  
A. Shoghi ◽  
A. Shakeri ◽  
H. Abdizadeh ◽  
M.R. Golobostanfard
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Processing

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

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