Saturation of ionization edge absorption by donors in germanium

1993 ◽  
Vol 56 (1) ◽  
pp. 22-28 ◽  
Author(s):  
T. Theiler ◽  
H. Navarro ◽  
R. Till ◽  
F. Keilmann
Author(s):  
Soumyadeep Ghosh ◽  
Rukshana Pervin ◽  
Haranath Ghosh ◽  
M. K. Tiwari ◽  
Parasharam M. Shirage

2011 ◽  
Vol 40 (42) ◽  
pp. 11070 ◽  
Author(s):  
P. Chandrasekaran ◽  
S. Chantal E. Stieber ◽  
Terrence J. Collins ◽  
Lawrence Que, Jr. ◽  
Frank Neese ◽  
...  

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.


1968 ◽  
Vol 30 (2) ◽  
pp. 461-468 ◽  
Author(s):  
D. V. Chepur ◽  
D. M. Bercha ◽  
I. D. Turyanitsa ◽  
V. Yu. Slivka

1992 ◽  
Vol 18 (1) ◽  
pp. 85-90 ◽  
Author(s):  
T Uozumi ◽  
K Okada ◽  
A Kotani ◽  
O Durmeyer ◽  
J. P Kappler ◽  
...  

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