Photothermal determination of vertical crack lengths in silicon nitride

1990 ◽  
Vol 50 (5) ◽  
pp. 465-471 ◽  
Author(s):  
J. Rantala ◽  
J. Hartikainen ◽  
J. Jaarinen
Keyword(s):  
Silicon Nitride ◽  
Vertical Crack

Determination of Free Silicon in Sintered Silicon Nitride by Laser Raman Spectrometry

1989 ◽  
Vol 97 (1132) ◽  
pp. 1466-1470
Author(s):  
Atsushi CHINO ◽  
Hideo IWATA ◽  
Sirou TORIZUKA ◽  
Kazuya YABUTA
Keyword(s):  
Silicon Nitride ◽  
Raman Spectrometry ◽  
Laser Raman ◽  
Free Silicon ◽  
Sintered Silicon

A Method for Quantitative Phase Analysis of Silicon Nitride by X-Ray Diffraction

1990 ◽  
Vol 5 (3) ◽  
pp. 121-124 ◽  
Author(s):  
David J. Devlin ◽  
Kamal E. Amin
Keyword(s):  
Silicon Nitride ◽  
Iterative Method ◽  
Calibration Curve ◽  
Quantitative Measurement ◽  
Quantitative Phase Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pure Phases ◽  
Yttrium Disilicate

AbstractThe relative intensities ratios for the determination of the relative amounts of alpha and beta phases in silicon nitride and the relative amounts of delta yttrium disilicate (Y2Si2O7) and nitrogen apatite [Y5(SiO4)3N] are reported. These constants were determined using an iterative method applicable when the pure phases are not easily prepared. In addition, a calibration curve was obtained for the quantitative measurement of free silicon in silicon nitride over the range 0 to 0.3% by weight of Si.

Determination of P,T-conditions developed at high-temperature shock compression of silicon nitride in planar recovery ampoules

2016 ◽  
Vol 54 (2) ◽  
pp. 197-205 ◽  
Author(s):  
V. V. Yakushev ◽  
A. V. Utkin ◽  
A. N. Zhukov ◽  
D. V. Shakhrai ◽  
V. V. Kim
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Shock Compression ◽  
Temperature Shock

scholarly journals Determination of trace impurities in sintered silicon carbide and silicon nitride by the pressure acid decomposition/ICP-AES.

1992 ◽  
Vol 41 (12) ◽  
pp. T151-T156 ◽  
Author(s):  
Yoshinori UWAMINO ◽  
Hisashi MORIKAWA ◽  
Akira TSUGE ◽  
Kiyoshi NAKANE ◽  
Yasuo IIDA ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Acid Decomposition ◽  
Trace Impurities ◽  
Sintered Silicon

scholarly journals Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform

2019 ◽  
Vol 220 ◽  
pp. 03012
Author(s):  
Ilia Elmanov ◽  
Anna Elmanova ◽  
Sophia Komrakova ◽  
Alexander Golikov ◽  
Natalya Kaurova ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Etching Rate ◽  
High Ratio ◽  
Practical Application ◽  
Non Destructive

In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.

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