Equation of state data for silicon-germanium alloys under pressures up to 42 GPa

1991 ◽  
Vol 53 (2) ◽  
pp. 114-117 ◽  
Author(s):  
G. Queisser ◽  
W. B. Holzapfel
2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.


2013 ◽  
Vol 16 (6) ◽  
pp. 1655-1658 ◽  
Author(s):  
A. Belafhaili ◽  
L. Laânab ◽  
F. Cristiano ◽  
N. Cherkashin ◽  
A. Claverie

1987 ◽  
Vol 97-98 ◽  
pp. 145-148 ◽  
Author(s):  
P.M. Fauchet ◽  
D. Hulin ◽  
A. Migus ◽  
A. Antonetti ◽  
J.P. Conde ◽  
...  

1997 ◽  
Vol 82 (11) ◽  
pp. 5773-5778 ◽  
Author(s):  
P.-E. Hellberg ◽  
S.-L. Zhang ◽  
F. M. d’Heurle ◽  
C. S. Petersson

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