Self-Assembled Si Quantum-Ring Structures on a Si Substrate by Plasma-Enhanced Chemical Vapor Deposition Based on a Growth-Etching Competition Mechanism

2007 ◽  
Vol 19 (12) ◽  
pp. 1577-1581 ◽  
Author(s):  
L. W. Yu ◽  
K. J. Chen ◽  
J. Song ◽  
J. Xu ◽  
W. Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Quantum Ring ◽  
Si Substrate ◽  
Competition Mechanism ◽  
Ring Structures ◽  
Self Assembled

scholarly journals Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Kun Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spectral Characteristics ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Broadband Absorption ◽  
Gate Effect ◽  
Pressure Chemical

AbstractThe Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO2/Si substrate; next, the graphene/WS2 and graphene/MoS2 hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS2 and MoS2 material on graphene/SiO2/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS2 and MoS2 material have the strong broadband absorption capabilities, the photo-generated electrons from WS2 can transfer to the underlying p-type graphene when graphene/WS2 hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

Nucleation and selected area deposition of diamond by biased hot filament chemical vapor deposition

1995 ◽  
Vol 10 (2) ◽  
pp. 425-430 ◽  
Author(s):  
W. Zhu ◽  
F.R. Sivazlian ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Wire Mesh ◽  
Reactor Wall ◽  
Nucleation Density ◽  
Si Substrate ◽  
Diamond Nucleation ◽  
Hot Filament

This paper describes a process for uniformly enhancing the nucleation density of diamond films on silicon (Si) substrates via dc-biased hot filament chemical vapor deposition (HFCVD). The Si substrate was negatively biased and the tungsten (W) filaments were positively biased relative to the grounded stainless steel reactor wall. It was found that by directly applying such a negative bias to the Si substrate in a typical HFCVD process, the enhanced diamond nucleation occurred only along the edges of the Si wafer. This resulted in an extremely nonuniform nucleation pattern. Several modifications were introduced to the design of the substrate holder, including a metal wire-mesh inserted between the filaments and the substrate, in the aim of making the impinging ion flux more uniformly distributed across the substrate surface. With such improved growth system designs, uniform enhancement of diamond nucleation across the substrate surface was realized. In addition, the use of certain metallic wire mesh sizes during biasing also enabled patterned or selective diamond deposition.

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition

2000 ◽  
Vol 77 (3) ◽  
pp. 370-372 ◽  
Author(s):  
G. Patriarche ◽  
I. Sagnes ◽  
P. Boucaud ◽  
V. Le Thanh ◽  
D. Bouchier ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Self Assembled
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