Characterization of Cu-Sn/Pb diffusion zones of microelectronic contacts by means of electron probe microanalysis and ion beam sputtering

1995 ◽  
Vol 353 (3-4) ◽  
pp. 271-277 ◽  
Author(s):  
Siegfried D�britz ◽  
Wolfgang Hauffe
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Characterization of carbon nitride thin films prepared by dual ion beam sputtering

1996 ◽  
Vol 69 (6) ◽  
pp. 764-766 ◽  
Author(s):  
A. Fernández ◽  
P. Prieto ◽  
C. Quirós ◽  
J. M. Sanz ◽  
J.‐M. Martin ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Characterization of Si-N films prepared by reactive ion beam sputtering

1982 ◽  
Vol 11 (3) ◽  
pp. 491-504 ◽  
Author(s):  
M. D. Aggarwal ◽  
S. Ashok ◽  
S. J. Fonash
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

The significance of in situ conditions in the characterization of GaSb nanopatterned surfaces via ion beam sputtering

2011 ◽  
Vol 110 (7) ◽  
pp. 074301 ◽  
Author(s):  
Osman El-Atwani ◽  
J. P. Allain ◽  
Alex Cimaroli ◽  
Anastassiya Suslova ◽  
Sami Ortoleva
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
In Situ Conditions ◽  
Beam Sputtering

Composition-Dependent Characterization of Sb 2 Te 3 Thin Films Prepared by Ion Beam Sputtering Deposition

2010 ◽  
Vol 27 (8) ◽  
pp. 087201 ◽  
Author(s):  
Fan Ping ◽  
Zheng Zhuang-Hao ◽  
Liang Guang-Xing ◽  
Cai Xing-Min ◽  
Zhang Dong-Ping
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering

Hafnium Nitride Dielectric Phase Films Fabricated by Ion-Beam Sputtering

1993 ◽  
Vol 327 ◽  
Author(s):  
Karl. A. Klemm ◽  
L. F. Johnson ◽  
W. E. Kosik ◽  
D. R. Mckenzie ◽  
I. Perez ◽  
...  
Keyword(s):  
Ion Beam ◽  
Spectroscopic Characterization ◽  
Optical Characteristics ◽  
Ion Beam Sputtering ◽  
Dielectric Phase ◽  
Hafnium Nitride ◽  
Beam Sputtering ◽  
Salt Structure ◽  
Film Dielectric

AbstractHafnium nitride films were deposited by ion-beam sputtering, and characterized for their composition, electrical, structural, mechanical and optical characteristics. Films were found to vary widely in their properties, based upon the parameters under which they were deposited. The films were found to have a nitrogen to hafnium ratio of up to 1.45:1, resistivity varying from 10−2 to 105 Ω-cm, as well as widely variable optical characteristics, depending on process variables. Structural characterization of the dielectric phase HfNx (x>l) material by X-ray and electron diffraction reveals a distortion of the hafnium mononitride rock salt structure with increasing amounts of nitrogen, in accordance with previous findings. Infrared spectroscopic characterization of the thin film dielectric phase hafnium nitride optical properties reveals the likely existence of multiple bonding between nitrogen in the material.

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