High-rate deposition of titanium silicides under high gas flow rate by chemical vapour deposition

1994 ◽  
Vol 13 (12) ◽  
pp. 860-862 ◽  
Author(s):  
C. Kawai
Keyword(s):  
Chemical Vapour Deposition ◽  
Flow Rate ◽  
Gas Flow ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
High Rate ◽  
Gas Flow Rate

scholarly journals Mechanism and Effect of the Dilution Gas Flow Rate on Various Fe–Si/SiO2 Soft Magnetic Composites during Fluidised Bed Chemical Vapour Deposition

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 963
Author(s):  
Zhaoyang Wu ◽  
Zihan Gao ◽  
Qian Zhao ◽  
Hui Kong ◽  
Mingyang Li ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Sio2 Film ◽  
Fluidised Bed ◽  
Gas Flow Rate ◽  
Soft Magnetic ◽  
Magnetic Composites ◽  
Soft Magnetic Composites

The effect of the dilution gas flow rate on inorganic oxide insulating layers can improve fluidised bed chemical vapour deposition (FBCVD) in Fe–Si/inorganic-oxide soft magnetic composites and obtain excellent magnetic properties. Herein, Fe–Si/SiO2 composite particles coated via FBCVD and deposited at a 125–350 mL/min Ar-dilution gas flow rate were prepared and sintered into soft magnetic composites. Results demonstrate that SiO2 deposited on the Fe–Si substrate particle surface changed from submicron SiO2 clusters (125 mL/min) to an incomplete SiO2 film, then to a complete SiO2 film, and finally to a porous SiO2 film as the Ar-dilution gas flow rate increased. SiO2 layers began to transform from the amorphous to the beta-cristobalite state with a hexagonal crystal structure between 1149.45 K and 1280.75 K. However, the SiO2 amorphous layers’ crystallisation did not affect the Fe–Si substrate particles’ crystal structure. With the increasing Ar-dilution gas flow rate, the saturation magnetisation of Fe–Si/SiO2 soft magnetic composites initially decreased and then increased. The electrical resistivity increased before 150 mL/min, followed by an increase between 150 and 250 mL/min and then decreased, whereas the total core loss exhibited the opposite trend. These results show that magnetic performance can be promoted by selecting a suitable dilution flow rate.

scholarly journals Additional obstacles in carbon nanotube growth by gas-flow directed chemical vapour deposition unveiled through improving growth density

2019 ◽  
Vol 1 (10) ◽  
pp. 4076-4081
Author(s):  
Takashi Tsuji ◽  
Kenji Hata ◽  
Don N. Futaba ◽  
Shunsuke Sakurai
Keyword(s):  
Chemical Vapour Deposition ◽  
Gas Flow ◽  
Vapour Deposition ◽  
Catalyst Support ◽  
Chemical Vapour ◽  
Deposition Process ◽  
Fast Heating ◽  
Support Engineering ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

We report growth of ultralong carbon nanotubes by combining a fast-heating chemical vapour deposition process with catalyst support engineering.

Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH4/H2 PE-CVD

2014 ◽  
Vol 47 (6) ◽  
pp. 478-482 ◽  
Author(s):  
Satoshi Nishida ◽  
Hiroshi Muta ◽  
Shizuma Kuribayashi
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
High Rate ◽  
Gas Flow Rate

Polycrystalline silicon deposited on glass by subatmospheric-pressure chemical vapour deposition at a high rate

2002 ◽  
Vol 82 (15) ◽  
pp. 1695-1701 ◽  
Author(s):  
Peter Münster ◽  
Michel Sarret ◽  
Tayeb Mohammed-Brahim ◽  
Nathalie Coulon ◽  
Jean-Yves Mevellec
Keyword(s):  
Chemical Vapour Deposition ◽  
Polycrystalline Silicon ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
High Rate ◽  
Subatmospheric Pressure ◽  
Pressure Chemical

Relationship between Precursor Gas Flow Rate with the Structural and Morphology Properties of Diamond like Carbon Films

2014 ◽  
Vol 970 ◽  
pp. 128-131
Author(s):  
Ong Wai Kit ◽  
Karim bin Deraman ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Jackie Chen Keng Yik
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Chemical Vapour ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Gas Flow Rate ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Direct Current Plasma

Diamond like carbon (DLC) thin films were grown onto glass substrates by using direct current plasma enhance chemical vapour deposition (DC-PECVD) system. Films were deposited under fixed deposition pressure (4 x 10-1 Torr), substrate temperature (500°C) and deposition time (3 hours) but with different flow rate of precursor gas (methane, hydrogen and argon). The fabricated films were characterized by using x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD has revealed that the DLC films were having amorphous phase as the XRD spectrum did not show any obvious sharp peak. From AFM, it was discovered that the precursor gas flow rate has inversely relationship with the grain size and surface roughness of films.

scholarly journals The effects of gas flow rate and annealing on the morphological properties of zinc oxide nanostructures thin film using chemical vapour deposition process

2017 ◽  
Vol 13 (1) ◽  
Author(s):  
W. H. Khoo ◽  
S. M. Sultan ◽  
M. Z. Sahdan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Chemical Vapour Deposition ◽  
Gas Flow ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Zinc Oxide Nanostructures ◽  
Glass Substrates ◽  
Oxide Nanostructures ◽  
Chemical Vapour Deposition Technique

Zinc Oxide nanostructures thin films have been deposited on glass substrates by using chemical vapour deposition technique at 1000°C assisted by gas blocker. Glass substrates was sputtered by ~5nm of gold to form a catalyst layer on top of glass. Different gas flow rates of 0.05, 0.10, 0.20, 0.40 L/min were used in the deposition. After the deposition, the layer was annealed at temperatures of 500°C for 1 hours under atmospheric pressure. The surface morphologies of ZnO thin film were investigated field emission scanning electron microscope (FESEM). X-ray diffraction (XRD) results confirm the presence of ZnO layer with high peak of (002) crystal orientation and shows improvement after annealing. The mechanism of ZnO nanostructures formation will be discussed in this paper

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