Anode-support system for the direct electrorefining of cement copper Part II: Process conditions using a circular cell with vertical rotary cathode

1995 ◽  
Vol 25 (11) ◽  
Author(s):  
R. Gana ◽  
M. Figueroa ◽  
L. Kattan ◽  
I. Moller ◽  
M.A. Esteso
Keyword(s):  
Support System ◽  
Process Conditions ◽  
Circular Cell ◽  
Anode Support

Electrochemical production of cuprous iodide using the anode-support system

1999 ◽  
Vol 51 (1) ◽  
pp. 87-95 ◽  
Author(s):  
R. Gana ◽  
M. Figueroa ◽  
V. Arancibia ◽  
M. Baeza
Keyword(s):  
Support System ◽  
Electrochemical Production ◽  
Anode Support

Electrochemical production of cuprous oxide using the anode-support system

1993 ◽  
Vol 23 (4) ◽  
pp. 308-315 ◽  
Author(s):  
M. G. Figueroa ◽  
R. E. Gana ◽  
W. C. Cooper ◽  
J. Ji
Keyword(s):  
Support System ◽  
Cuprous Oxide ◽  
Electrochemical Production ◽  
Anode Support

Direct electrorefining of copper scrap using an anode-support system in a bipolar cell

1993 ◽  
Vol 23 (8) ◽  
pp. 813-818 ◽  
Author(s):  
R. Gana ◽  
M. Figueroa ◽  
L. Kattan ◽  
S. Castro
Keyword(s):  
Support System ◽  
Bipolar Cell ◽  
Anode Support

Preparation of Cu2O from TiO2 and CTAB using the Anode Support System

2008 ◽  
Vol 8 (24) ◽  
pp. 4674-4678 ◽  
Author(s):  
A. Abdulkarem ◽  
E.A. Ammar ◽  
Y. Ying ◽  
L.J. Lin
Keyword(s):  
Support System ◽  
Anode Support

The anode-support system: an alternative for the electrorefining of tin in sulphuric acid medium

1993 ◽  
Vol 23 (1) ◽  
pp. 60-65 ◽  
Author(s):  
R. E. Gana ◽  
M. G. Figueroa ◽  
L. Kattan ◽  
J. M. Orpinas
Keyword(s):  
Acid Medium ◽  
Sulphuric Acid ◽  
Support System ◽  
Anode Support ◽  
Sulphuric Acid Medium

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

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