Dielectric and Raman spectroscopy of MWCVD diamond thin films

1996 ◽  
Vol 7 (4) ◽  
Author(s):  
O. S�nchez-Garrido ◽  
C. G�mez-Aleixandre ◽  
J.S�nchez Ol�as ◽  
J.M. Albella ◽  
M. Hern�ndez-V�lez ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Diamond Thin Films

Structural studies of diamond thin films grown from dc arc plasma

1997 ◽  
Vol 12 (10) ◽  
pp. 2533-2542 ◽  
Author(s):  
L. C. Nistor ◽  
J. Van Landuyt ◽  
V. G. Ralchenko ◽  
A. A. Smolin ◽  
K. G. Korotushenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Arc Discharge ◽  
Stacking Faults ◽  
Argon Laser ◽  
Arc Plasma ◽  
Structural Studies ◽  
Transmission Electron ◽  
Diamond Thin Films ◽  
Dc Arc

Diamond thin films grown from a dc-arc discharge in CH4/H2 mixtures on Si wafers were examined by transmission electron microscopy and Raman spectroscopy. This deposition method provides good diamond crystallinity at high CH4 concentrations (3%–9%). Seeding the substrate with 5 nm diamond particles at a density of 2 × 1012 cm−1 followed by argon laser irradiation to reduce their agglomeration gives, just after starting deposition, a density of growth centers of 1010cm−2. At 3% CH4 concentration the film grows with almost perfect crystallites. Richer CH4 mixtures (5% and 9%) produce crystallites with twins and stacking faults. An amorphous 20–70 nm SiC interlayer is present at these CH4 concentrations, which was not observed at 3% CH4. Amorphous sp3- and sp2-bonded carbon was detected by Raman spectroscopy at all CH4 concentrations and correlated with TEM data.

Analysis of the composite structures in diamond thin films by Raman spectroscopy

1990 ◽  
Vol 41 (6) ◽  
pp. 3738-3745 ◽  
Author(s):  
R. E. Shroder ◽  
R. J. Nemanich ◽  
J. T. Glass
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Composite Structures ◽  
Diamond Thin Films

Characterization of 〈111〉 diamond thin films by micro-Raman spectroscopy

2004 ◽  
Vol 13 (4-8) ◽  
pp. 886-890 ◽  
Author(s):  
M. Mermoux ◽  
A. Tajani ◽  
B. Marcus ◽  
E. Bustarret ◽  
E. Gheeraert ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Micro Raman Spectroscopy ◽  
Diamond Thin Films

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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