Anisotropy of electron-phonon interaction spectra in a magnetic field and quantum interference effects in antimony point contacts

1992 ◽  
Vol 88 (1-2) ◽  
pp. 135-162 ◽  
Author(s):  
I. K. Yanson ◽  
O. I. Shklyarevskii ◽  
N. N. Gribov
Keyword(s):  
Magnetic Field ◽  
Quantum Interference ◽  
Point Contacts ◽  
Interference Effects ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Quantum interference effects in a strongly fluctuating magnetic field

1996 ◽  
Vol 53 (20) ◽  
pp. 13641-13644 ◽  
Author(s):  
G. M. Gusev ◽  
U. Gennser ◽  
X. Kleber ◽  
D. K. Maude ◽  
J. C. Portal ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Interference ◽  
Interference Effects

scholarly journals Impact of electron–phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

2021 ◽  
Vol 12 ◽  
pp. 1209-1225
Author(s):  
Patryk Florków ◽  
Stanisław Lipiński
Keyword(s):  
Quantum Dots ◽  
Mean Field ◽  
Strongly Correlated ◽  
Interference Effects ◽  
Phonon Coupling ◽  
Many Body ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Kondo Effects ◽  
Electron Phonon Coupling

We calculate the conductance through strongly correlated T-shaped molecular or quantum dot systems under the influence of phonons. The system is modelled by the extended Anderson–Holstein Hamiltonian. The finite-U mean-field slave boson approach is used to study many-body effects. Phonons influence both interference and correlations. Depending on the dot unperturbed energy and the strength of electron–phonon interaction, the system is occupied by a different number of electrons that effectively interact with each other repulsively or attractively. This leads, together with the interference effects, to different spin or charge Fano–Kondo effects.

scholarly journals Electron-phonon interaction and nonlinear transport phenomena in solid Hg point-contacts

2009 ◽  
Vol 150 (2) ◽  
pp. 022036
Author(s):  
V V Khotkevych ◽  
N V Khotkevych ◽  
S V Morlok ◽  
B L Konopatskyi ◽  
A V Khotkevych
Keyword(s):  
Transport Phenomena ◽  
Nonlinear Transport ◽  
Point Contacts ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Noise Equivalent Power of Graphene–Superconductor-Based Optical Sensor

2017 ◽  
Vol 16 (01) ◽  
pp. 1750006
Author(s):  
B. Afkhami Aghda ◽  
A. Moftakharzadeh ◽  
M. Hosseini
Keyword(s):  
Magnetic Field ◽  
Optical Sensors ◽  
Operation Mode ◽  
Noise Equivalent Power ◽  
Direct Relation ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Device Resistance ◽  
Conductivity Electron ◽  
The Magnetic Field

In this paper, the noise equivalent power (NEP) of optical sensors based on graphene–superconductor junctions in the voltage bias operation mode has been calculated. The effects of device parameters such as temperature, magnetic field and device resistance on the NEP of these detectors have been thoroughly investigated. By solving the related equations, graphene specific heat, thermal conductivity, electron–phonon interaction and responsivity of the detector have been obtained. Using the calculated parameters, the NEP of the device was obtained. The results show that at constant magnetic field the NEP will increase linearly by increasing device temperature. On the other hand, at constant temperature the behavior of NEP versus magnetic field is first increasing and then decreasing. Our calculations show that the optimal resistance of the device has a direct relation with respect to the device temperature, while in the investigated operating range the optimal resistance of device is almost independent of the magnetic field.

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