Single-Color Centers in Diamond as Single-Photon Sources and Quantum Sensors

2014 ◽  
pp. 303-318 ◽  
Author(s):  
Boris Naydenov ◽  
Fedor Jelezko
Keyword(s):  
Single Photon ◽  
Color Centers ◽  
Photon Sources

scholarly journals Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 361 ◽  
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
Quantum Information ◽  
Information Technologies ◽  
Room Temperature ◽  
Single Photon ◽  
Forward Bias ◽  
Color Centers ◽  
Practical Implementation ◽  
Ambient Conditions ◽  
Silicon Vacancy ◽  
Photon Sources

Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive single-photon emitters for room temperature applications. However, diamond is a material at the interface between insulators and semiconductors. Therefore, it is extremely difficult to excite color centers electrically and consequently develop bright and efficient electrically driven single-photon sources. Here, using a comprehensive theoretical approach, we propose and numerically demonstrate a concept of a single-photon emitting diode (SPED) based on a SiV center in a nanoscale AlN/diamond heterojunction device. We find that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i-type diamond region. The maximum SPEL rate is more than five times higher than what can be achieved in SPEDs based on diamond p-i-n diodes. Despite the high density of defects at the AlN/diamond interface, the SPEL rate can reach about 4 Mcps, which coincides with the limit imposed by the quantum efficiency and the lifetime of the shelving state of the SiV center. These findings provide new insights into the development of bright room-temperature electrically driven single-photon sources for quantum information technologies and, we believe, stimulate further research in this area.

scholarly journals Single photon sources based on HPHT nanodiamonds

2021 ◽  
Vol 2015 (1) ◽  
pp. 012053
Author(s):  
N S Kurochkin ◽  
S P Eliseev ◽  
V V Sychev ◽  
A V Gritsienko ◽  
V S Gorelik ◽  
...  
Keyword(s):  
Correlation Functions ◽  
High Speed ◽  
Single Photon ◽  
Luminescence Decay ◽  
Second Order ◽  
Color Centers ◽  
Energy Structure ◽  
Single Photons ◽  
Photon Sources ◽  
The Creation

Abstract Color centers in nanodiamonds are promising candidates for the creation of high-speed sources of single photons without blinking and degradation. Color centers in HPHT nanodiamonds have been investigated. The luminescence decay curves of color centers have been measured. Second order correlation functions were measured for nanodiamonds with sizes from 50 nm to 250 nm. Conclusions about the energy structure of color centers were made based on the correlation functions.

Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20554-20561 ◽  
Author(s):  
Qiang Li ◽  
Jun-Feng Wang ◽  
Fei-Fei Yan ◽  
Ze-Di Cheng ◽  
Zheng-Hao Liu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Single Photon ◽  
Color Centers ◽  
Depth Control ◽  
Photon Sources ◽  
Broad Interest

Color centers in silicon carbide have recently attracted broad interest as high bright single photon sources and defect spins with long coherence times at room temperature.

scholarly journals Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces

2021 ◽  
Vol 118 (20) ◽  
pp. 204005
Author(s):  
Yasuto Hijikata ◽  
Shota Komori ◽  
Shunsuke Otojima ◽  
Yu-Ichiro Matsushita ◽  
Takeshi Ohshima
Keyword(s):  
Formation Process ◽  
Single Photon ◽  
Crystal Surfaces ◽  
Radiation Properties ◽  
Photon Sources

scholarly journals Hong-Ou-Mandel Interference with Imperfect Single Photon Sources

2021 ◽  
Vol 126 (6) ◽  
Author(s):  
H. Ollivier ◽  
S. E. Thomas ◽  
S. C. Wein ◽  
I. Maillette de Buy Wenniger ◽  
N. Coste ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Sources
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