Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20554-20561 ◽  
Author(s):  
Qiang Li ◽  
Jun-Feng Wang ◽  
Fei-Fei Yan ◽  
Ze-Di Cheng ◽  
Zheng-Hao Liu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Single Photon ◽  
Color Centers ◽  
Depth Control ◽  
Photon Sources ◽  
Broad Interest

Color centers in silicon carbide have recently attracted broad interest as high bright single photon sources and defect spins with long coherence times at room temperature.

scholarly journals Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3177
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
Silicon Carbide ◽  
Spectral Properties ◽  
Room Temperature ◽  
Single Photon ◽  
Numerical Approach ◽  
Color Centers ◽  
Electrical Excitation ◽  
High Brightness ◽  
Quantum Photonics ◽  
First Time

Color centers in silicon carbide have recently emerged as one of the most promising emitters for bright single-photon emitting diodes (SPEDs). It has been shown that, at room temperature, they can emit more than 109 photons per second under electrical excitation. However, the spectral emission properties of color centers in SiC at room temperature are far from ideal. The spectral properties could be significantly improved by decreasing the operating temperature. However, the densities of free charge carriers in SiC rapidly decrease as temperature decreases, which reduces the efficiency of electrical excitation of color centers by many orders of magnitude. Here, we study for the first time the temperature characteristics of SPEDs based on color centers in 4H-SiC. Using a rigorous numerical approach, we demonstrate that although the single-photon electroluminescence rate does rapidly decrease as temperature decreases, it is possible to increase the SPED brightness to 107 photons/s at 100 K using the recently predicted effect of hole superinjection in homojunction p-i-n diodes. This gives the possibility to achieve high brightness and good spectral properties at the same time, which paves the way toward novel quantum photonics applications of electrically driven color centers in silicon carbide.

scholarly journals Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 361 ◽  
Author(s):  
Igor A. Khramtsov ◽  
Dmitry Yu. Fedyanin
Keyword(s):  
Quantum Information ◽  
Information Technologies ◽  
Room Temperature ◽  
Single Photon ◽  
Forward Bias ◽  
Color Centers ◽  
Practical Implementation ◽  
Ambient Conditions ◽  
Silicon Vacancy ◽  
Photon Sources

Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive single-photon emitters for room temperature applications. However, diamond is a material at the interface between insulators and semiconductors. Therefore, it is extremely difficult to excite color centers electrically and consequently develop bright and efficient electrically driven single-photon sources. Here, using a comprehensive theoretical approach, we propose and numerically demonstrate a concept of a single-photon emitting diode (SPED) based on a SiV center in a nanoscale AlN/diamond heterojunction device. We find that in spite of the high potential barrier for electrons in AlN at the AlN/diamond heterojunction, under forward bias, electrons can be efficiently injected from AlN into the i-type diamond region of the n-AlN/i-diamond/p-diamond heterostructure, which ensures bright single-photon electroluminescence (SPEL) of the SiV center located in the i-type diamond region. The maximum SPEL rate is more than five times higher than what can be achieved in SPEDs based on diamond p-i-n diodes. Despite the high density of defects at the AlN/diamond interface, the SPEL rate can reach about 4 Mcps, which coincides with the limit imposed by the quantum efficiency and the lifetime of the shelving state of the SiV center. These findings provide new insights into the development of bright room-temperature electrically driven single-photon sources for quantum information technologies and, we believe, stimulate further research in this area.

Room temperature integrated single photon sources based on highly photostable perovskites nanocubes coupled to optical nanofibers

2021 ◽  
Author(s):  
Alberto Bramati ◽  
Stefano Pierini ◽  
Marianna D'Amato ◽  
Mayank Goyal ◽  
Quentin C. Glorieux ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Photon ◽  
Photon Sources

scholarly journals Bright single photon sources in lateral silicon carbide light emitting diodes

2018 ◽  
Vol 112 (23) ◽  
pp. 231103 ◽  
Author(s):  
Matthias Widmann ◽  
Matthias Niethammer ◽  
Takahiro Makino ◽  
Torsten Rendler ◽  
Stefan Lasse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Light Emitting Diodes ◽  
Single Photon ◽  
Light Emitting ◽  
Photon Sources

Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 281-284 ◽  
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinobu Onoda ◽  
Moriyoshi Haruyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Field Effect Transistors ◽  
Single Photon ◽  
Metal Oxide Semiconductor ◽  
Nitrogen Vacancy ◽  
Oxide Semiconductor ◽  
Nitrogen Vacancy Center ◽  
Photon Sources ◽  
Vacancy Center

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSsonlyin 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.

scholarly journals Bright room temperature single photon source at telecom range in cubic silicon carbide

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Junfeng Wang ◽  
Yu Zhou ◽  
Ziyu Wang ◽  
Abdullah Rasmita ◽  
Jianqun Yang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Single Photon ◽  
Single Photon Source ◽  
Cubic Silicon Carbide ◽  
Photon Source

Room-temperature single-photon sources based on nanocrystal fluorescence in photonic/plasmonic nanostructures

2014 ◽  
Author(s):  
S. G. Lukishova ◽  
J. M. Winkler ◽  
L. J. Bissell ◽  
D. Mihaylova ◽  
Andreas C. Liapis ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Photon ◽  
Plasmonic Nanostructures ◽  
Photon Sources
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