Deep level spectroscopy in semicounductors by optical excitation

2008 ◽  
pp. 50-68 ◽  
Author(s):  
H. G. Grimmeiss
Keyword(s):  
Deep Level ◽  
Optical Excitation

Defects Identified in SiC and Their Implications

2008 ◽  
Vol 600-603 ◽  
pp. 285-290 ◽  
Author(s):  
M. Bockstedte ◽  
A. Marini ◽  
Adam Gali ◽  
Oleg Pankratov ◽  
A. Rubio
Keyword(s):  
Excited States ◽  
Density Functional ◽  
Deep Level ◽  
Optical Excitation ◽  
Kinetic Properties ◽  
Vibrational Modes ◽  
Functional Theory ◽  
New Approach ◽  
Excitonic Effects ◽  
Complex Phenomena

Defect signatures, such as deep level positions, hyperfine parameters, local vibrational modes and optical transitions characterize a defect and enable the identification of defect centers. This identification is a key to an understanding of complex phenomena like the defect kinetics. Albeit density functional theory enabled the identification of several defects and their kinetic properties, a new approach is needed to address the optical excitation of defect. Within a quasiparticle theory and taking into account excitonic effects we analyze the excited states of VC +.

scholarly journals Локализация носителей заряда в квантовых ямах InGaN/GaN, ограниченная объемным зарядом

2022 ◽  
Vol 64 (3) ◽  
pp. 371
Author(s):  
Н.И. Бочкарева ◽  
Ю.Г. Шретер
Keyword(s):  
Quantum Well ◽  
Space Charge ◽  
Deep Level ◽  
Forward Bias ◽  
Optical Excitation ◽  
Tunneling Spectroscopy ◽  
Carrier Localization ◽  
Photoluminescence Band ◽  
Peak Energy ◽  
Carrier Tunneling

The mechanism of carrier tunneling through the potential walls of InGaN/GaN quantum well in the p-n structures is studied by means of the deep center tunneling spectroscopy. A number of humps on the current and photocurrent tunneling spectra, as well as on the forward bias dependences of the intensity and the peak energy of photoluminescence band from the quantum well are detected. These findings allow us to propose a model of carrier localization in the quantum well that permit to relate the tunneling transparency of the potential walls of the QW to the space-charge of deep-level centers in the quantum well barriers and its changes under optical excitation and forward biasing of p-n structure.

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

LOW ENERGY OPTICAL EXCITATION IN CeB6

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-737-C8-738
Author(s):  
Y. S. Kwon ◽  
S. Kimura ◽  
T. Nanba ◽  
S. Kunii ◽  
M. Ikezawa ◽  
...  
Keyword(s):  
Optical Excitation ◽  
Low Energy
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