Low-Cost Submicrometer Organic Field-Effect Transistors

2009 ◽  
pp. 155-188 ◽  
Author(s):  
Susanne Scheinert ◽  
Gernot Paasch ◽  
Ingo Hörselmann ◽  
Andrei Herasimovich
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors

Organic Materials for Multifunctional Transistor-Based Devices

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Microprocessor Technology ◽  
Silicon Based ◽  
Electronic Ink ◽  
Made In ◽  
Charge Channel

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

scholarly journals A Rapid, Low‐Cost, and Scalable Technique for Printing State‐of‐the‐Art Organic Field‐Effect Transistors

2016 ◽  
Vol 1 (5) ◽  
pp. 1600090 ◽  
Author(s):  
Inés Temiño ◽  
Freddy G. Del Pozo ◽  
M. R. Ajayakumar ◽  
Sergi Galindo ◽  
Joaquim Puigdollers ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Low Cost ◽  
Organic Field Effect Transistors

scholarly journals Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing

2015 ◽  
Vol 17 (9) ◽  
pp. 6635-6643 ◽  
Author(s):  
Yong Jin Jeong ◽  
Dong-Jin Yun ◽  
Jaeyoung Jang ◽  
Seonuk Park ◽  
Tae Kyu An ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Organic Electronic ◽  
Solution Processed ◽  
Flexible Devices ◽  
Significant Interest ◽  
Grown Graphene

Solution-processed organic field effect transistors (OFETs) have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices.

High-Performance Low-Cost Organic Field-Effect Transistors with Chemically Modified Bottom Electrodes

2006 ◽  
Vol 128 (51) ◽  
pp. 16418-16419 ◽  
Author(s):  
Chong-an Di ◽  
Gui Yu ◽  
Yunqi Liu ◽  
Xinjun Xu ◽  
Dacheng Wei ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors ◽  
Chemically Modified

Stable Organic Field Effect Transistors with Low-Cost MoO 3 /Al Source-Drain Electrodes

2013 ◽  
Vol 30 (2) ◽  
pp. 028501
Author(s):  
Hui Zhang ◽  
Bao-Xiu Mi ◽  
Xin Li ◽  
Zhi-Qiang Gao ◽  
Lu Zhao ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors

scholarly journals Increased mobility and on/off ratio in organic field-effect transistors using low-cost guanine-pentacene multilayers

2017 ◽  
Vol 111 (4) ◽  
pp. 043301 ◽  
Author(s):  
Wei Shi ◽  
Yifan Zheng ◽  
André D. Taylor ◽  
Junsheng Yu ◽  
Howard E. Katz
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Organic Field Effect Transistors

scholarly journals New Approaches in Flexible Organic Field-Effect Transistors (FETs) Using InClPc

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1712 ◽  
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Sergio González Habib
Keyword(s):  
Optical Properties ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Deposition Process ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Potential Applications

Organic semiconductor materials have been the center of attention because they are scalable, low-cost for device fabrication, and they have good optical properties and mechanical flexibility, which encourages their research. Organic field-effect transistors (OFETs) have potential applications, specifically in flexible and low-cost electronics such as portable and wearable technologies. In this work we report the fabrication of an InClPc base flexible bottom-gate/top-contact OFET sandwich, configured by the high-evaporation vacuum technique. The gate substrate consisted of a bilayer poly(ethylene terephthalate) (PET) and indium–tin oxide (ITO) with nylon 11/Al2O3. The device was characterized by different techniques to determine chemical stability, absorbance, transmittance, bandgap, optical properties, and electrical characteristics in order to determine its structure and operational properties. IR spectroscopy verified that the thin films that integrated the device did not suffer degradation during the deposition process, and there were no impurities that affected the charge mobility in the OFET. Also, the InClPc semiconductor IR fingerprint was present on the deposited device. Surface analysis showed evidence of a nonhomogeneous film and also a cluster deposition process of the InClPc. Using the Tauc model, the device calculated indirect bandgap transitions of approximately 1.67 eV. The device’s field effect mobility had a value of 36.2 cm2 V−1 s−1, which was superior to mobility values obtained for commonly manufactured OFETs and increased its potential to be used in flexible organic electronics. Also, a subthreshold swing of 80.64 mV/dec was achieved and was adequate for this kind of organic-based semiconductor device. Therefore, semiconductor functionality is maintained at different gate voltages and is transferred accurately to the film, which makes these flexible OFETs a good candidate for electronic applications.

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